Pixel Array Exposure Segmentation for HDR Phase Detection

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Solution Overview

Problem

Existing solid-state imaging devices cannot simultaneously acquire a signal for phase difference detection and generate a high dynamic range image due to the inability to change exposure times across different light receiving regions under an on-chip lens.

Innovation Solution

A solid-state imaging device with a pixel array unit where multiple pixels of the same color share pixel transistors, with some pixels set to a first exposure time and others set to a shorter second exposure time, allowing for simultaneous phase difference detection and high dynamic range image generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a plurality of light receiving regions is formed for one on-chip lens with a separating region prevented from light shielding, then nonuniformity of sensitivity in the plurality of light receiving regions is reduced, but a signal to generate a high dynamic range image cannot be acquired because exposure time cannot be changed in the plurality of light receiving regions

Engineering Contradiction:
Improvesensitivity uniformityVSAvoidexposure time variability
Core Design Contradiction:
Measurement precisionVSAdaptability or versatility

Solution Approach 1:

The pixel array is divided into first pixel regions and second pixel regions under each on-chip lens. First pixel regions are configured for phase difference detection with a first exposure time, while second pixel regions are configured for high dynamic range imaging with a second exposure time. This segmentation allows different exposure times in different regions, enabling both phase difference detection and HDR imaging simultaneously while maintaining sensitivity uniformity through the removed separating region.

Inventive Principle:
Principle #1Segmentation

2Device complexity

If pixels share pixel transistors to reduce device complexity, then the number of transistors per pixel is reduced, but controlling different exposure times for different pixels becomes more challenging

Engineering Contradiction:
Improvetransistor countVSAvoidexposure time control
Core Design Contradiction:
Device complexityVSEase of operation

Solution Approach 1:

The patent implements dynamic exposure time control by introducing separate control signal lines (first control signal line and second control signal line) that can independently adjust the exposure times of first pixel regions and second pixel regions respectively. This dynamic control mechanism allows the system to adapt exposure times for different functional requirements while sharing transistor resources, resolving the conflict between device complexity and operational flexibility.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the simultaneous acquisition of phase difference detection signals and high dynamic range images by varying exposure times across pixels under a single on-chip lens, improving image quality and detection accuracy.

Implementation Method 1

a photodiode 21 that photoelectrically converts light of a specific color into an electrical signal

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS12166062B2Solid-state imaging device, driving method therefor, and electronic apparatus
Publication Date: 2024.12.10 SONY GROUP CORP
  • US12166062B2 patent drawing
  • US12166062B2 patent drawing
  • US12166062B2 patent drawing

AI summary

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.