Pixel Isolation Layout for Autofocus Image Sensor Crosstalk

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current image sensors face challenges in achieving optimal optical and electrical characteristics, particularly in auto-focusing applications, due to limitations in pixel isolation and separation structures, which affect signal quality and cross-talk between photoelectric conversion regions.

Innovation Solution

The image sensor incorporates a pixel isolation structure and separation structures in a semiconductor substrate to define pixel regions, with specific configurations of pixel isolation portions and separation structures that prevent cross-talk and enhance signal differentiation, allowing for improved auto-focusing capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If pixel isolation structures are used to define pixel regions, then cross-talk between regions is reduced, but device complexity increases

Engineering Contradiction:
Improvecross-talk between pixel regionsVSAvoidpixel isolation structure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The pixel isolation structure is segmented into first pixel isolation portions extending in a first direction and second pixel isolation portions extending in a second direction, creating a grid-like pattern that effectively divides the semiconductor substrate into discrete pixel regions while managing complexity through systematic segmentation

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The separation structure is positioned at specific locations between photoelectric conversion regions within pixel regions, providing localized cross-talk prevention where it is most needed rather than uniform isolation throughout the entire device, thus reducing overall device complexity

Inventive Principle:
Principle #3Local quality

2Measurement precision

If separation structures are added between photoelectric conversion regions, then signal differentiation is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvesignal differentiationVSAvoidmanufacturing complexity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The separation structure is integrated with the pixel isolation structure, where the separation structure extends between photoelectric conversion regions and connects to or is formed as part of the pixel isolation portions, combining multiple functions into a single manufactured element to reduce manufacturing complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The pixel isolation portions serve dual functions: they define pixel region boundaries and simultaneously act as separation structures between photoelectric conversion regions, eliminating the need for separate dedicated separation elements and simplifying the manufacturing process

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces cross-talk between pixel regions, increases signal differentiation, and enhances the auto-focusing operation by ensuring better light management and signal quality, thereby improving the overall performance of the image sensor.

Implementation Method 1

a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions

Methodology Applied
Scientific EffectElectrical isolation: Electrical Resistance

Implementation Method 2

first and second photoelectric conversion regions disposed in the first pixel region

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS11955497B2Image sensor
Publication Date: 2024.04.09 SAMSUNG ELECTRONICS CO LTD
  • US11955497B2 patent drawing
  • US11955497B2 patent drawing
  • US11955497B2 patent drawing

AI summary

An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.