CMOS Image Sensor Isolation Layout for Overflow Charge Crosstalk

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

CMOS image sensors experience crosstalk between adjacent pixels due to overflown photocharges, leading to increased noise, which is exacerbated as pixel size decreases.

Innovation Solution

Incorporating a first isolation region to absorb overflown photocharges and a second isolation region made of insulation material to physically prevent the movement of these charges between adjacent photoelectric conversion elements, thereby reducing noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If pixel size is decreased to increase pixel density, then pixel density is improved, but crosstalk between adjacent pixels increases due to overflown photocharges

Engineering Contradiction:
Improvepixel densityVSAvoidcrosstalk between pixels
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent introduces isolation regions that segment the continuous semiconductor substrate into electrically independent pixel regions. These isolation regions act as barriers that divide the pixel array, preventing photocharge migration between adjacent pixels while maintaining high pixel density through effective use of available space.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The isolation regions serve as intermediary structures between adjacent photoelectric conversion elements. By introducing this intermediate layer with different electrical properties, the patent blocks the harmful interaction (photocharge migration) between pixels while allowing each pixel to function independently.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If isolation regions are added to reduce crosstalk, then noise is reduced, but device complexity increases

Engineering Contradiction:
Improvenoise from overflown photochargesVSAvoidstructure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent merges multiple functions into the isolation regions: they provide electrical isolation between pixels, absorb excess photocharges, and maintain physical separation. This consolidation of functions into a single structural element reduces overall device complexity compared to implementing separate mechanisms for each function.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The isolation regions are designed to perform multiple functions simultaneously: blocking photocharge migration, absorbing overflow charges, and providing structural separation. This multi-functionality reduces the need for additional specialized components, thereby managing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces noise in CMOS image sensors by electrically and physically isolating adjacent pixels, improving image quality and reducing the impact of miniaturization on full well capacity.

Implementation Method 1

configured to receive a voltage to generate an electric field to attract photocharges from the first photoelectric conversion element or the second photoelectric conversion element

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 2

configured to physically prevent movement of the overflown photocharges

Methodology Applied
Scientific EffectInsulation:

Implementation Method 3

each of the first photoelectric conversion element and the second photoelectric conversion element configured to generate photocharges in response to incident light

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS12142618B2Image sensor including isolation region for removing photocharges
Publication Date: 2024.11.12 SK HYNIX INC
  • US12142618B2 patent drawing
  • US12142618B2 patent drawing
  • US12142618B2 patent drawing

AI summary

An image sensing device is provided to include a first photoelectric conversion element and a second photoelectric conversion element that are arranged adjacent to each other; a first isolation region located between the first and second photoelectric conversion elements and configured to receive a voltage to generate an electric field to attract photocharges from the first or second photoelectric conversion element; and a second isolation region separated from the first isolation region, the second isolation region located between the first and second photoelectric conversion elements and structured to include an insulation material to block photocharges from moving between the first and second photoelectric conversion elements.