Solid-State Devices TRIZ Cases

Nano-imprinted optics and a stepped mesa focus and collimate µLED emission, cutting cross-talk and enabling denser optical communication arrays.

Vertically stacked LEDs and a quantum-dot color conversion layer cut pixel area by about two-thirds while simplifying full-color panel manufacturing.

A segmented pixel electrode layout improves micro light-emitting element use and boosts light emission efficiency within compact display pixels.

Separate fingerprint and living-body circuits with larger photodetectors improve liveness authentication and anti-counterfeiting accuracy.

An LCP lid with pedestal and channel guides lens placement over an ASIC, improving tolerances, light isolation, and package compactness.

Multi-stage relay substrate transfer stretches LED arrays in two directions to reduce seams, periodic patterns, and color variation.

A sidewall-and-bottom via electrode cuts contact resistance in stacked image sensor wiring while improving bonding reliability and process stability.

A non-overlapping third P/N electrode layout blocks leakage paths from insulation cracks, improving flip-chip LED reliability.

A high-k trench-bottom insulation layer cuts electric field concentration during avalanche breakdown, improving voltage endurance and on-resistance.

A modular LED base module enables flexible display manufacturing and embeds sensors without extra housing openings or application-specific redesign.

A light absorbing layer between adjacent emitters absorbs lateral light to reduce color mura and white color shift across viewing angles.

A reflective layer over exposed resin cuts light absorption while preserving lead insulation and support in a compact LED package.

A protruding confinement structure surrounds electrode solder patterns to contain reflow overflow and reduce short-circuit risk in tiny micro elements.

Electric-field LED alignment and partition walls reduce bonding defects and misalignment in micro-LED electrode assembly.

A light filter layer uses transmitting and blocking regions around the critical angle to match LCD viewing angles and limit light leakage.

Stable Mn4+-doped phosphor inks enable fine patterned color conversion on mini-LEDs and micro-LEDs with better efficiency and thermal stability.

Angled pixel rows on N-gonal spherical display substrates reduce wide-angle color shift while avoiding separate hemisphere designs.

Vertical LED connections use a top connection layer and common electrodes to widen bonding area, cut short-circuit risk, and improve production margin.

An inductor-assisted ideal diode circuit turns off the MOSFET during negative transients to block high current and sustain load-side capacitor supply.

Integrated barrier layers and lenses replace light control films to cut viewing angles while preserving front luminance and touch sensitivity.

Combining UVB LEDs with wavelength conversion, this case shows how lighting can deliver white light plus vitamin D and cell-activation wavelengths.

N-doped amorphous silicon forms conductive and insulating regions without masks, cutting display electrode process cost and complexity.

Different expansion layers, fixing members, and a ductile adhesive keep module gaps stable and prevent visible seams in large displays.

An exciplex between two organic compounds boosts reverse intersystem crossing, raising EL efficiency while lowering driving voltage and power use.

Equal-width perpendicular light-blocking members improve width control and prevent color mixing between display pixel areas.

A cover layer with a through-hole guides solder flow to fix LEDs accurately at short board spacing while limiting solder spread.

Bank structures formed with circuit elements cut process count while integrating light emitters without thickness overlap.

A curved slit overlap in the electrode shields light leaks while preserving liquid crystal alignment to improve aperture and contrast ratios.

White CSP emitters with wavelength conversion and RGB color filters simplify full-color displays while improving uniformity and reducing cost.

Spaced stamp heads bond release tape at discrete points, enabling stable protective sheet removal without damaging the adherend.

Short default NAND program pulses can leave slow cells under-programmed; this case extends pulse duration selectively to complete data storage.

Splitting the intermediate layer inside bank openings improves quantum dot emission uniformity, brightness, and process control.

An intermediary transfer substrate improves microdevice alignment and bonding when moving pixelated optoelectronic structures onto a system substrate.

Varying spacer trench gaps and mold-filled trenches increase contact area and reduce interface peeling in stacked semiconductor chips.

UV- and heat-expanded transfer resin breaks adhesive force uniformly, enabling fast micro LED chip transfer with less damage and misalignment.

Separating front and rear substrate wiring spreads power more evenly, reducing heat buildup, power loss, and uneven image brightness.

Self-aligned lithography and oxide bonding enable dense 3D memory connections while avoiding misalignment and wiring damage from high-temperature processing.

Three independently driven LED channels are tuned to keep CIExy points near the blackbody curve across a 1800 K to 10000 K CCT range.

Alternating even and odd scan drives let stacked base and memory chips detect both open and short TSV connection failures.

A roughened wafer backside initiates vertical cracks at lower blade load, enabling reliable cleaving with less residual stress and cost.

Variable polymer thickness between light-emitting substrates reduces air gaps, improving adhesion, reliability, and service life.

Copper wiring cuts display signal delay, while barrier and insulating films block impurity ingress to keep oxide TFTs stable and low power.

By integrating inversion into the wafer transporter, the apparatus simplifies wafer handling while supplying the correct dicing posture.

A seed-intermediate-Au multilayer isolates Cu wiring from moisture and Cu-Au contact, improving ceramic substrate reliability.

Localized electret charge patterns guide photoluminescent particle deposition onto diode arrays, improving color conversion alignment at small pixel pitches.

Angled side reflectors redirect ambient light onto a sensing surface, helping transparent AR films reduce diffusion and maintain image contrast.

A crosslinked polyimide film enables laser lift-off temporary bonding with high thermal tolerance and damage-free separation of small electronic elements.

A dedicated edge-contact heat dissipation structure on the IC backplane conducts and radiates micro LED heat to maintain panel performance.

A vertically aligned diode and MOS capacitor stack boosts capacitance density while limiting chip area for IC bypass and compensation use.

Curved protrusions in the protective layer refract LED light upward, cutting reflection losses and improving top emission efficiency.