Pixel Isolation Surface Structure for Accurate Phase Detection
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Solution Overview
Problem
The existing imaging devices face issues with light reflection from pixel isolation portions, leading to deteriorated phase difference detection accuracy and color mixture between adjacent imaging elements.
Innovation Solution
The proposed imaging device incorporates a semiconductor substrate with imaging elements arranged in a matrix, where each imaging element includes pixels with photoelectric conversion units and a pixel isolation portion that penetrates the substrate and has an uneven surface to reduce light reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a pixel isolation portion is provided to optically and electrically isolate adjacent pixels, then isolation accuracy is improved, but light reflection occurs causing deterioration of phase difference detection accuracy and color mixture
Solution Approach 1:
The pixel isolation portion is configured with a curved surface (convex or concave) instead of a flat surface. This curvature causes incident light to reflect in multiple directions rather than creating a concentrated reflection, thereby reducing the harmful reflection effect while maintaining the isolation function between adjacent pixels
Solution Approach 2:
The invention changes the surface geometry parameter of the pixel isolation portion from flat to curved. By modifying the surface shape parameter, the light reflection characteristic is altered to reduce concentrated reflection while preserving the optical isolation function between pixels
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces light reflection, thereby improving the accuracy of phase difference detection and preventing color mixture between adjacent imaging elements, enhancing the overall performance of the imaging device.
Implementation Method 1
at least one of surfaces of the pixel isolation portion is an uneven surface... reducing reflection and controlling deterioration in accuracy of phase difference detection and generation of color mixture
Implementation Method 2
a plurality of imaging elements that is arrayed in a matrix on the semiconductor substrate and that performs photoelectric conversion on incident light
Data Source
AI summary
There is provided an imaging device including a semiconductor substrate (300), and a plurality of imaging elements (100) that is arrayed in a matrix on the semiconductor substrate and that performs photoelectric conversion on incident light, in which each of the plurality of imaging elements includes a plurality of pixels (302a and 302b) which is provided in such a manner as to be adjacent to each other in a predetermined unit region of the semiconductor substrate and each of which includes a photoelectric conversion unit, and a pixel isolation portion (304) that isolates the plurality of pixels, the pixel isolation portion is provided in such a manner as to penetrate at least a part of the semiconductor substrate in a thickness direction of the semiconductor substrate, and at least one of surfaces of the pixel isolation portion is an uneven surface.