Semiconductor Pixel Partition Walls as Electrodes for Etch Protection
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Solution Overview
Problem
Existing semiconductor light-emitting devices face challenges in achieving excellent electrical properties and efficient manufacturing processes, particularly in the integration of partition walls as electrodes to define pixel spaces and reduce active layer exposure to etchants.
Innovation Solution
A semiconductor light-emitting device structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, with an insulating layer coating the side surfaces and a partition wall structure extending along these layers, where the partition wall structure includes a seed layer and a partition wall body that protrudes above the second conductivity type semiconductor layer, acting as an electrode and defining pixel spaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If partition walls are formed to define pixel spaces, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent combines the partition wall structure with the electrode function by making the partition wall body conductive, allowing it to serve both as a structural element defining pixel spaces and as an electrode for electrical connection, thereby reducing overall device complexity while maintaining manufacturing precision
Solution Approach 2:
The partition wall structure is designed to perform multiple functions simultaneously: it defines pixel spaces, acts as an electrode, and provides structural support, eliminating the need for separate components and simplifying the overall device architecture
2Reliability
If active layer exposure to etchants is reduced, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies an insulating layer to the side surfaces of the semiconductor layers before the etching process, creating a protective barrier in advance that prevents etchant damage to the active layer during manufacturing
Solution Approach 2:
The insulating layer acts as an intermediary protective layer between the etchant and the active layer, allowing the etching process to proceed while protecting sensitive regions from chemical damage
3Manufacturing precision
If partition wall structure protrudes above semiconductor layer, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent merges the partition wall body with the electrode structure by making the partition wall conductive, so that the protruding structure serves dual purposes as both a pattern-defining element and an electrical component, reducing the need for additional separate layers
Data Source
AI summary
A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.