Pixel Structure with Reflective Electrode for Transflective LCD
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Solution Overview
Problem
Conventional transflective LCD pixel structures require complex manufacturing processes and high costs due to the use of padding layers and photoresist bumps to achieve dual cell gaps, which complicates the production and increases costs while maintaining display quality in high luminance environments.
Innovation Solution
A pixel structure with a single cell gap process is developed, utilizing a gate, patterned dielectric and semiconductor layers, a reflective pixel electrode, and a transparent pixel electrode, where the reflective pixel electrode covers bumps to enhance reflectivity, and an overcoat layer adjusts the electrical field, allowing for balanced display in both transmissive and reflective modes without additional manufacturing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a padding layer and photoresist bumps are used to form dual cell gaps, then the display effect is equalized between reflective and transparent areas, but the manufacturing process becomes complicated and costs increase
Solution Approach 1:
The invention removes the padding layer from the pixel structure, eliminating the need for dual cell gap formation. By extracting this unnecessary component, the manufacturing process is simplified while maintaining display quality through alternative means (direct ITO electrode design on the TFT structure).
Solution Approach 2:
The ITO electrode serves multiple functions: it acts as both the pixel electrode and the reflective element, eliminating the need for separate padding layers and photoresist bumps. This multi-functional design simplifies the structure while achieving both transmissive and reflective display modes.
2Illumination intensity
If photoresist bumps are added below the reflective electrode, then reflectivity is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The invention combines the reflective function directly into the ITO pixel electrode itself, merging the electrode and reflective elements into a single component. This eliminates the need for separate photoresist bumps while maintaining high reflectivity through proper electrode design and positioning.
3Reliability
If a dual cell gap structure is formed with padding layer and photoresist bumps, then display quality is maintained in high luminance environments, but manufacturing costs increase
Solution Approach 1:
The invention extracts and removes the padding layer and associated dual cell gap structure, achieving high luminance display quality through a simplified single cell gap design. The ITO electrode configuration is optimized to provide the necessary optical performance without the complex additional structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces costs, and maintains high-quality display performance in both modes by adjusting the thickness and material of the overcoat layer, minimizing light leakage and ensuring balanced display images between transmissive and reflective areas.
Implementation Method 1
a reflective electrode adapted to reflect an external light, such that a reflective area is formed
Data Source
AI summary
A pixel structure disposed on a substrate includes a gate, a patterned dielectric layer, a patterned semiconductor layer, a patterned metal layer, an overcoat layer and a transparent pixel electrode. The patterned dielectric layer and the gate covered thereby are disposed on the substrate. The patterned semiconductor layer on the patterned dielectric layer includes bumps and a channel above the gate. The patterned metal layer includes a source, a drain and a reflective pixel electrode connecting the drain. The source and the drain cover a portion of the channel. The reflective pixel electrode covers the bumps. The gate, the patterned dielectric layer, the patterned semiconductor layer and the patterned metal layer form a transistor on which the overcoat layer has a contact hole exposing a portion of the reflective pixel electrode. The transparent pixel electrode on the overcoat layer electrically connects the reflective pixel electrode through the contact hole.