Pixel Structure Storage Capacitor Area Adjustment for Feedthrough Voltage Consistency

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Solution Overview

Problem

Conventional TFT-LCD display technologies suffer from display frame flicker due to differences in feedthrough voltages between pixel structures, degrading display quality, especially in large-sized panels.

Innovation Solution

A pixel structure with a storage capacitor formed by a patterned semiconductor layer, common line pattern, and pixel electrode, where the area of the patterned semiconductor layer is adjusted to maintain consistent feedthrough voltage across different pixel positions, preventing signal decay and flicker.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the display panel size is increased, then the display area is enlarged, but the feedthrough voltage difference between pixels increases causing display frame flicker

Engineering Contradiction:
Improvedisplay areaVSAvoiddisplay quality
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent applies local quality by making the storage capacitor area position-dependent. Pixels at different positions in the display panel have different storage capacitor areas, with pixels farther from the data line having larger capacitor areas. This local variation compensates for the increased voltage drop in remote pixels, ensuring uniform feedthrough voltage across the entire large-sized display panel and eliminating display frame flicker.

Inventive Principle:
Principle #3Local quality

2Area of stationary object

If the distance between data line and pixel structure increases, then the display coverage is expanded, but the feedthrough voltage decreases causing voltage drop

Engineering Contradiction:
Improvedisplay coverageVSAvoidfeedthrough voltage
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent changes the parameter of storage capacitor area based on pixel position. By adjusting the capacitor area parameter, the feedthrough voltage is compensated for pixels at different distances from the data line. Remote pixels receive larger capacitor areas which increase their storage capacitance, thereby compensating for the voltage drop and maintaining consistent feedthrough voltage across the display panel.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the storage capacitor area is increased, then the feedthrough voltage is stabilized, but the pixel structure area increases

Engineering Contradiction:
Improvefeedthrough voltage consistencyVSAvoidpixel structure area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

Instead of uniformly increasing storage capacitor areas across all pixels, the patent applies local quality by selectively enlarging capacitor areas only for pixels that require compensation based on their position. Pixels closer to the data line maintain smaller capacitor areas while remote pixels have larger areas, optimizing the balance between feedthrough voltage stability and pixel structure area utilization.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution ensures consistent feedthrough voltage across all pixel structures, effectively preventing display frame flicker and enhancing display quality by adjusting the capacitance of the storage capacitor based on the area of the patterned semiconductor layer.

Implementation Method 1

the patterned semiconductor layer is disposed on the insulation layer above the common line pattern, and disposed between the common line pattern and the pixel electrode, so as to form a storage capacitor

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS7763891B2Pixel structure and active device array substrate
Publication Date: 2010.07.27 WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
  • US7763891B2 patent drawing
  • US7763891B2 patent drawing
  • US7763891B2 patent drawing

AI summary

A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a substrate. In addition, the common line pattern is disposed on the substrate and covered with an insulation layer. The protective layer covers the active device and a part of the insulation layer. The protective layer has a contact window exposing the active device. The pixel electrode is disposed on the protective layer and electrically connected to the active device through the contact window. The patterned semiconductor layer is disposed on the insulation layer above the common line pattern. The patterned semiconductor layer is located between the common line pattern and the pixel electrode.