Plasma Adjusting Unit for Uniform Etching in Semiconductor Processing
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in precisely controlling plasma distribution within the processing chamber, leading to non-uniform etching rates between the center and peripheral parts of substrates during semiconductor manufacturing.
Innovation Solution
A plasma processing apparatus is designed with a plasma adjusting unit comprising a ferromagnetic core and insulator, radially positioned around the electrostatic chuck, which adjusts the magnetic field and electric field to equalize plasma density across the substrate by applying DC voltage, ensuring uniform plasma distribution and etching rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing apparatus is used, then plasma processing can be performed, but plasma distribution cannot be precisely controlled leading to non-uniform etching rates
Solution Approach 1:
A magnetic field adjusting unit is introduced as an intermediary component between the plasma generation system and the substrate. This unit includes a magnetic field generating electrode that applies a magnetic field to the plasma, thereby indirectly controlling plasma distribution and ion bombardment characteristics to achieve uniform etching across the substrate surface.
Solution Approach 2:
The invention controls plasma characteristics by changing the magnetic field parameter. By adjusting the strength and distribution of the magnetic field applied by the adjusting unit, the plasma density and ion flux distribution are modified, enabling precise control over etching uniformity without fundamentally changing the plasma generation mechanism.
2Productivity
If plasma density is increased to improve processing speed, then productivity increases, but plasma distribution becomes less uniform
Solution Approach 1:
The magnetic field adjusting unit enables independent control of plasma density and plasma distribution by adjusting magnetic field parameters. High plasma density can be maintained for fast processing while the magnetic field distribution is optimized to ensure uniform ion flux across the substrate, resolving the trade-off between productivity and uniformity.
Solution Approach 2:
The magnetic field configuration is designed to dynamically balance plasma confinement and distribution. The magnetic field strength and spatial distribution are optimized to confine plasma sufficiently for high density while simultaneously directing ion flux uniformly across the substrate surface, enabling both high productivity and uniform etching.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution achieves uniform plasma density and etching rates across the substrate, minimizing differences between the center and peripheral parts, thereby enhancing the consistency and quality of semiconductor device manufacturing.
Implementation Method 1
a plasma adjusting unit comprising a body comprising ferromagnetic material disposed radially outwardly of the support surface of the electrostatic chuck at substantially the same level as the support surface and an auxiliary power source electrically coupled to the body
Implementation Method 2
a plasma adjusting unit including a body comprising ferromagnetic material
Implementation Method 3
a plasma generator that transforms the process gas injected into the process chamber into plasma
Implementation Method 4
a substrate support disposed in the process chamber and including an electrostatic chuck having a support surface dedicated to support a substrate to be plasma processed
Data Source
AI summary
A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.