Plasma Processing Method for Chamber Component Maintenance
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Solution Overview
Problem
The use of hydrogen or H2O gas in plasma ashing processes for substrates with low-k dielectric films or metal layers leads to prolonged processing times and surface deterioration of quartz chamber components, resulting in particle generation and altered processing characteristics.
Innovation Solution
A plasma processing method involving alternating substrate processing with hydrogen-containing gas and in-chamber processing with oxygen-containing gas to maintain chamber component integrity, where the substrate processing step is performed multiple times after each in-chamber processing step, with a controlled ratio of processing times to minimize particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen gas or H2O gas is used for ashing substrates with low-k dielectric films or metal layers, then oxidation of the substrate is avoided, but the processing time is significantly prolonged
Solution Approach 1:
The patent implements periodic alternation between hydrogen-containing gas plasma processing and oxygen-containing gas plasma processing. The substrate processing step using hydrogen-containing gas is performed multiple times, followed by an in-chamber processing step using oxygen-containing gas, then repeating the substrate processing step again. This periodic switching allows the system to maintain substrate protection while periodically cleaning chamber components to prevent particle generation, thereby resolving the time extension issue without compromising substrate protection.
2Productivity
If the power of plasma is increased to shorten ashing process duration, then processing efficiency is improved, but heat influence on chamber components increases causing surface deterioration
Solution Approach 1:
The patent introduces oxygen-containing gas plasma as an intermediary processing step that performs dual functions: it cleans organic materials from chamber component surfaces and simultaneously cools the chamber components. This intermediary step allows the system to use higher power hydrogen plasma for efficient ashing without directly exposing chamber components to excessive heat, as the oxygen plasma acts as a buffer that removes heat and prevents direct thermal damage to quartz components.
3Temperature
If components in the chamber are made of quartz to reduce heat influence, then thermal resistance is improved, but surface deterioration and particle generation occur due to plasma consumption
Solution Approach 1:
The patent converts the harmful effect of hydrogen plasma on quartz components into a beneficial periodic cleaning process. By intentionally allowing hydrogen plasma to interact with chamber components during substrate processing, organic materials accumulate on the quartz surfaces. Then, oxygen-containing gas plasma is used to remove these accumulated organics, which simultaneously cleans the components and prevents particle generation. This approach transforms the potential harm of plasma-component interaction into a self-cleaning mechanism that maintains component reliability.
4Productivity
If substrate processing is performed continuously without in-chamber processing, then productivity is maintained, but particle generation increases due to chamber component deterioration
Solution Approach 1:
The patent performs preliminary in-chamber processing with oxygen-containing gas plasma before continuing substrate processing. This preliminary action cleans the chamber component surfaces of accumulated organic materials that would otherwise deteriorate the components and generate particles during subsequent substrate processing. By performing this cleaning action in advance, the system maintains continuous productivity while preventing particle generation, as the chamber components are periodically restored to a clean state.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces particle generation and maintains processing characteristics by regularly treating chamber surfaces with oxygen plasma, thereby extending the lifespan of quartz components and improving ashing efficiency.
Implementation Method 1
plasma of a hydrogen-containing gas
Implementation Method 2
an organic material is removed from the target substrate by the plasma of the oxygen gas
Implementation Method 3
surfaces of components in the chamber is processed by plasma of an oxygen-containing gas
Implementation Method 4
oxygen gas cannot be used as an ashing gas. Therefore, it is suggested to perform an ashing process using, e.g., hydrogen gas or H2O gas
Data Source
AI summary
A plasma processing method includes a substrate processing step of performing predetermined processing on a target substrate loaded into a chamber by using plasma of a hydrogen-containing gas and unloading the processed substrate from the chamber; and an in-chamber processing step of processing surfaces of components in the chamber by plasma of an oxygen-containing gas after the substrate processing step is performed at least once. The substrate processing step is performed again at least once after the in-chamber processing step.