Plasma Dispersion Super-Resolved Imaging in Silicon

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Solution Overview

Problem

Current optical microscopy techniques are limited by the diffraction barrier, preventing effective super-resolution imaging in silicon beyond the wavelength limit, which is crucial for advanced silicon integrated circuit inspection and metrology.

Innovation Solution

A method involving the use of a pump beam, either Gaussian or doughnut-shaped, to create a free charge carrier density pattern in a crystal, allowing for the collinear projection of a probe beam and controlling its lateral and temporal transmission, thereby enhancing imaging resolution beyond the diffraction limit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional optical microscopy is used, then the imaging process is simple and direct, but the resolution is limited by the diffraction barrier to approximately half the wavelength of illuminating light

Engineering Contradiction:
Improveimaging resolutionVSAvoidimaging system complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The imaging process is segmented into two distinct stages: first, a pump beam creates a free charge carrier density pattern in the crystal; second, a probe beam measures this pattern. This segmentation allows the system to overcome the diffraction limit by using the pump beam to prepare a state that the probe beam can then measure with higher precision

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The pump beam performs a preliminary action by creating a free charge carrier density pattern before the measurement occurs. This preliminary modification of the crystal's charge distribution enables the subsequent probe beam to achieve super-resolution imaging that would be impossible with direct illumination alone

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If the pump beam creates a free charge carrier density pattern to achieve super-resolution, then imaging resolution beyond the diffraction limit is achieved, but the system requires multiple beams and complex control mechanisms

Engineering Contradiction:
Improveimaging resolutionVSAvoidbeam control system complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The pump beam and probe beam are merged into a single optical path, allowing them to be delivered through the same objective lens and optical train. This merging reduces the complexity of the beam delivery system while still enabling the sophisticated two-stage imaging process to occur

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The crystal itself serves as the medium that both generates and reveals the super-resolution information. The free charge carrier density pattern created by the pump beam automatically forms a measurable optical signature that the probe beam can detect, eliminating the need for additional transducers or conversion mechanisms

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach achieves super-resolution imaging by narrowing the point spread function of the probe beam, enabling the visualization of details smaller than the diffraction limit, specifically in silicon materials, with potential applications in silicon integrated circuit inspection and metrology.

Implementation Method 1

projecting a pump beam comprising a Gaussian beam or a doughnut beam into the crystal surface, thereby creating a free charge carrier (FCC) density pattern

Methodology Applied
Scientific EffectOptical absorption: Absorption (EM radiation)

Implementation Method 2

Plasma dispersion effect based super-resolved imaging

Methodology Applied
Scientific EffectPlasma dispersion effect:

Data Source

PatentUS11506604B2Plasma dispersion effect based super-resolved imaging
Publication Date: 2022.11.22 BAR ILAN UNIV
  • US11506604B2 patent drawing
  • US11506604B2 patent drawing
  • US11506604B2 patent drawing

AI summary

Disclosed herein is a super resolution imaging method and system for obtaining an image in a crystal material and/or device.