Plasma Etching Device Tapered Density Adjusting Member

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Solution Overview

Problem

Conventional plasma etching devices face challenges in achieving uniform in-plane plasma density, leading to non-uniform etching and tilting issues when processing large substrates, particularly in semiconductor manufacturing and MEMS sensor production, where high uniformity is critical for precise feature formation and mass consistency.

Innovation Solution

The plasma etching device employs a tapered plasma density adjusting member and a core member with a tapered lower end portion, combined to diffuse plasma uniformly across the chamber, ensuring a more even in-plane density distribution and reducing tilting during etching processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the plasma generation space is enlarged to process large substrates, then the substrate processing capability is improved, but the in-plane plasma density uniformity deteriorates due to concave density distribution

Engineering Contradiction:
Improvesubstrate processing areaVSAvoidin-plane plasma density uniformity
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The plasma generation space is divided into different regions with different plasma generation characteristics. The coil is positioned to create strong plasma generation at the periphery, while the central region relies on plasma diffusion from the periphery, creating local quality differences that achieve overall uniformity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The coil is positioned asymmetrically relative to the plasma generation space, with the coil located at the periphery rather than centrally. This asymmetric positioning creates a plasma density distribution that compensates for the natural tendency toward concave distribution in large spaces

Inventive Principle:
Principle #4Asymmetry

2Power

If RF power is applied to generate plasma in a large plasma generation space, then the plasma generation capability is improved, but the inductive electric field becomes insufficient at the central portion, worsening plasma density uniformity

Engineering Contradiction:
Improveplasma generation capabilityVSAvoidplasma density uniformity
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

A plasma diffusion medium (gas) acts as an intermediary to transport plasma from the periphery where the coil generates strong plasma to the central region where the inductive electric field is weak, enabling uniform plasma distribution without requiring direct inductive coupling throughout the entire space

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly improves the uniformity of in-plane plasma density, enabling more uniform etching across large substrates and reducing the occurrence of tilting, thus enhancing the precision and consistency of semiconductor and MEMS sensor manufacturing.

Implementation Method 1

generates an inductive electric field by applying RF power to the coil

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

generates plasma from the etching gas by the inductive electric field

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 3

the plasma generated at a portion close to the coil is led to a central portion of the chamber and an extremely concave in-plane density of the plasma is leveled

Methodology Applied
Scientific EffectPlasma diffusion: Diffusion

Data Source

PatentEP2903019B1Plasma etching device
Publication Date: 2019.11.06 SPP TECHNOLOGIES CO LTD
  • EP2903019B1 patent drawingFigure 1
  • EP2903019B1 patent drawingFigure 2~3
  • EP2903019B1 patent drawingFigure 4

AI summary

The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.