Plasma Generator Noise Reduction in Substrate Processing
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Solution Overview
Problem
In substrate processing for semiconductor manufacturing, differences in frequency between RF power supplies can cause noise, leading to unstable plasma generation, which affects the uniformity of substrate processing.
Innovation Solution
A substrate processing apparatus is designed with a process chamber, precursor and reactant gas supply sections, and plasma generators positioned to minimize noise interference, using a gas rectifier with partition members to rectify gas flows and ensure uniform gas distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple RF power supplies are used to generate plasma, then plasma generation capability is improved, but frequency differences cause noise interference and unstable plasma generation
Solution Approach 1:
The gas supply system is segmented into multiple independent channels with separate flow control valves for each RF power supply. This allows independent control and optimization of gas flow to each plasma generation zone, reducing interference between multiple RF power supplies while maintaining stable plasma generation across all zones
Solution Approach 2:
A gas distribution manifold serves as an intermediary component between the gas source and multiple RF power supplies. The manifold evenly distributes reactant gas to each plasma generation zone, ensuring uniform gas supply conditions that stabilize plasma generation despite the presence of multiple independent RF power supplies with different frequencies
2Device complexity
If gas flow is not rectified, then device complexity is reduced, but gas distribution uniformity across the substrate deteriorates
Solution Approach 1:
The gas distribution manifold extends in the radial dimension perpendicular to the substrate surface, creating multiple gas supply points distributed across the substrate area. This three-dimensional gas distribution approach ensures uniform reactant gas supply across the entire substrate surface without requiring complex flow rectification mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable and uniform plasma generation, improving the uniformity of film deposition and processing across the substrate, enhancing the quality of semiconductor devices.
Implementation Method 1
a plasma generator including a first plasma generator and a second plasma generator configured to convert the reactant gas into plasma
Implementation Method 2
In a processing apparatus that generates plasma using a plurality of radio frequency (RF) power supplies
Data Source
AI summary
A substrate processing apparatus includes: a process chamber configured to process a substrate; a precursor gas supply section for supplying a precursor gas; a reactant gas supply section for supplying a reactant gas; an exhauster for exhausting the process chamber; a plasma generator including first and second plasma generators for converting the reactant gas into plasma to activate the reactant gas, the first and second plasma generators being disposed so that a straight line passing through the center of the process chamber and the exhauster is interposed therebetween; and a gas rectifier including a first partition member disposed along an inner wall of the process chamber between the precursor gas supply section and the first plasma generator, and a second partition member disposed at an outer circumferential portion of the substrate along an inner wall of the process chamber between the precursor gas supply section and the second plasma generator.