Plasma Development of Metal Oxo Photoresist for Pattern Integrity
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Solution Overview
Problem
Existing photoresist materials for EUV lithography require high dosages for solubility switching and suffer from defects, pattern collapse, and inefficiencies in developing high aspect ratio features due to wet chemistry processes.
Innovation Solution
A plasma etching process is used to develop metal oxo photoresists, utilizing reactive gases and inert gases to form volatile byproducts, eliminating wet byproducts and defects, and providing high etch selectivity without the need for wet processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wet chemistry processes are used to develop photoresist, then the photoresist can be developed and patterned, but defects and pattern collapse occur especially in high aspect ratio features
Solution Approach 1:
The patent replaces wet chemistry processes with plasma-based dry processes for photoresist development. The plasma process uses reactive ions and radicals to selectively remove unexposed photoresist material through chemical reactions, eliminating the need for liquid developers that cause capillary forces, line-edge roughness, and pattern collapse in high aspect ratio structures.
Solution Approach 2:
The patent changes the chemical and physical parameters of the development process by using plasma state matter instead of liquid. The plasma process operates at controlled temperatures, pressures, and gas compositions to achieve selective removal of photoresist while maintaining pattern integrity, particularly for high aspect ratio features where wet processes fail.
2Productivity
If traditional lithography processes are used, then patterning can be achieved, but high dosages are required for solubility switching reducing efficiency
Solution Approach 1:
The patent replaces the solubility-based wet development mechanism with a plasma-based chemical reaction mechanism. The plasma process directly reacts with the photoresist material through ion bombardment and chemical reactions, enabling more efficient material removal with lower energy input and eliminating the need for high dosages required for solubility switching.
3Manufacturing precision
If wet development processes are used, then photoresist can be developed, but line-edge roughness increases reducing resolution
Solution Approach 1:
The patent replaces liquid-based wet development with plasma-based dry development. The plasma process provides more uniform and controlled removal of photoresist material, eliminating capillary forces and surface tension effects that cause line-edge roughness in wet processes. The plasma ions and radicals react uniformly with the photoresist surface, producing smoother edges and better resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma etching process achieves improved line-edge roughness, lower defect rates, and efficient pattern transfer into underlayers, allowing for thinner films and higher aspect ratios without pattern collapse.
Implementation Method 1
flowing a gas into the plasma chamber, and striking a plasma in the plasma chamber
Implementation Method 2
the plasma reacts with the unexposed regions to produce a volatile byproduct
Implementation Method 3
the gas reacts with the unexposed regions to produce a volatile byproduct
Data Source
AI summary
Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.