Plasma Scatter Mechanism for Impurity Separation

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Solution Overview

Problem

Impurities generated during substrate processing using plasma interfere with plasma generation efficiency and re-introduce into the processing space, deteriorating both plasma and substrate processing efficiency.

Innovation Solution

A substrate processing apparatus with a scatter mechanism that separates impurities from ions and radicals using a plate with central and edge openings, and a collision block to redirect impurities away from the plasma generation unit, ensuring they are discharged outside.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If plasma is supplied into the processing space to process substrates, then substrate processing is enabled, but impurities are generated and flow back to the plasma generation unit, deteriorating plasma generation efficiency

Engineering Contradiction:
Improvesubstrate processing efficiencyVSAvoidplasma generation efficiency
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The invention segments the flow path by introducing a baffle with a specific opening configuration that divides the plasma flow into separate paths: one for ions/radicals to reach the substrate and another for impurities to be directed to the exhaust. This spatial segmentation prevents impurity recirculation while maintaining substrate processing.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The baffle acts as an intermediary component between the plasma generation unit and the processing space. It mediates the plasma flow by selectively allowing ions and radicals to pass through to the substrate while diverting impurities toward the exhaust, thus protecting the plasma generation unit from impurity contamination.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If impurities are discharged from the processing space, then processing quality is maintained, but impurities may re-introduce into the processing space, deteriorating substrate processing efficiency

Engineering Contradiction:
Improvesubstrate processing qualityVSAvoidsubstrate processing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The baffle is designed with non-uniform opening distribution, concentrating openings in specific regions to create localized flow patterns. The opening is positioned to exploit pressure gradients and flow dynamics, creating a local exhaust pathway that preferentially captures impurities while preserving overall plasma flow to the substrate.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively minimizes the introduction of impurities into the plasma generation unit, maintaining plasma generation efficiency and preventing impurity attachment to substrates, thereby enhancing overall substrate processing efficiency.

Implementation Method 1

a collision block that is disposed over the first opening to face the first opening and that collides with the plasma supplied from the plasma generation unit and the impurities

Methodology Applied
Scientific EffectCollision: Impact Force

Implementation Method 2

A process gas supplied by the gas supply unit 2320 is excited into a plasma state by RF power applied by the power applying unit 2330

Methodology Applied
Scientific EffectRF excitation: Electromagnetic Induction

Implementation Method 3

a scatter that is disposed over the baffle and that separates the plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening

Methodology Applied
Scientific EffectPhysical separation: Filter (physical)

Data Source

PatentUS11139152B2Substrate processing apparatus
Publication Date: 2021.10.05 PSK INC
  • US11139152B2 patent drawing
  • US11139152B2 patent drawing
  • US11139152B2 patent drawing

AI summary

The inventive concept relates to an apparatus for processing a substrate. The substrate processing apparatus includes a scatter that is disposed over a baffle and that separates plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening to face the first opening and that collides with plasma supplied from a plasma generation unit and impurities.