Plasma Spectrum Sensor Layout for Uniformity Control in Etching
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Solution Overview
Problem
Existing semiconductor processing apparatuses face challenges in accurately controlling the uniformity of plasma formation, which affects the yield of semiconductor processes, as direct observation through viewing ports is insufficient for precise determination.
Innovation Solution
A sensor device is introduced that includes a lower and upper substrate, optical members, a selection element, a spectrum sensor, and an optical detector to collect raw data on plasma properties such as uniformity, density, and thickness by analyzing light emitted from the plasma in specific wavelength bands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If plasma is observed through a viewing port, then plasma can be visually monitored, but measurement precision of plasma uniformity is insufficient
Solution Approach 1:
The patent introduces an optical member as an intermediary between the plasma and the sensor. The optical member transmits light emitted from the plasma to the sensor, enabling indirect but precise measurement of plasma characteristics without direct contact with the plasma environment. This resolves the contradiction by providing a mediation mechanism that overcomes the limitations of direct observation through viewing ports.
Solution Approach 2:
The patent replaces mechanical/optical observation through viewing ports with an electronic sensing system. The sensor device detects plasma characteristics by measuring light intensity in specific wavelength bands and converting it to electrical signals, substituting the manual visual inspection method with an automated electronic measurement system that provides higher precision.
2Manufacturing precision
If control variables are adjusted based on visual observation, then plasma can be monitored during process, but manufacturing precision of plasma uniformity cannot be accurately controlled
Solution Approach 1:
The patent implements a feedback mechanism where the sensor continuously monitors plasma characteristics by detecting light intensity in specific wavelength bands. The measured data is fed back to the control system, which adjusts control variables to maintain desired plasma uniformity. This closed-loop feedback system resolves the contradiction by providing accurate real-time measurement data that enables precise manufacturing control.
Solution Approach 2:
The patent substitutes manual visual assessment with an automated electronic sensing and control system. The sensor device measures plasma light emission spectrally, and the control system processes this data to precisely control plasma uniformity, replacing the imprecise human visual judgment with an objective electronic measurement and control system.
3Measurement precision
If a sensor device with multiple optical members is used, then plasma properties can be measured at multiple positions, but device complexity increases
Solution Approach 1:
The patent divides the sensing function into multiple optical members, each responsible for detecting light from specific spatial positions or wavelength bands. This segmentation allows simultaneous measurement of plasma properties at multiple locations or spectral regions, achieving comprehensive spatial uniformity measurement while managing complexity through functional division.
Solution Approach 2:
The patent designs the sensor device with multiple optical members that can serve multiple functions. The same sensor platform can measure both spatial distribution and spectral characteristics of plasma by utilizing different optical members for different measurement objectives, achieving multi-functionality that justifies the increased device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor device enables accurate control of plasma characteristics before the process, improving the yield of semiconductor processes by allowing for precise adjustment of control variables in the processing apparatus.
Implementation Method 1
a light-receiving optical system configured to reflect light entering the at least one light-receiving area in a direction parallel to the upper surface of the lower substrate
Implementation Method 2
an optical detector configured to detect intensity of light in the wavelength band
Implementation Method 3
a wavelength selector includes at least one of a plasmonic filter and a grid structure
Implementation Method 4
a wavelength selector includes at least one of a plasmonic filter and a grid structure
Implementation Method 5
a spectrum sensor disposed in the space and including a wavelength selector configured to separate light output by the selection element in a predetermined wavelength band
Data Source
AI summary
A sensor device includes a lower substrate, an upper substrate disposed on the lower substrate, formed of a material different from a material of the lower substrate, and including a plurality of light-receiving regions disposed in different positions, a plurality of optical members disposed between the lower substrate and the upper substrate, and configured to be generated in a plasma formed in a space above the upper substrate and to provide a traveling path of light entering the plurality of light-receiving regions, a spectrum sensor configured to detect intensity of light received through each of the plurality of optical members in a predetermined wavelength band, a controller configured to generate raw data including intensity of light according to the wavelength band by matching the raw data with each of the plurality of light-receiving regions.