Plasma Processing Apparatus Temperature Controller
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving uniformity in plasma processing due to temperature inconsistencies within the substrate chuck, leading to non-uniform etching profiles and thermal loads during plasma etching.
Innovation Solution
A plasma processing apparatus with a substrate chuck equipped with a temperature controller that regulates coolant flow rates through cooling and heating channels, including a 3-way valve to control coolant temperature, and additional features like heat block layers and power rods with varying thermal conductivity to maintain temperature uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a cooling channel with uniform coolant flow is used, then the cooling function is provided, but temperature uniformity across the substrate chuck is insufficient
Solution Approach 1:
The patent applies local quality by varying the coolant flow rate to different regions of the substrate chuck based on their specific thermal requirements. The controller adjusts flow rates to first, second, and third cooling channels differently, with higher flow rates to edge regions that experience greater thermal loads during plasma processing. This localized adjustment of cooling intensity addresses the temperature uniformity problem by matching cooling capacity to local heat generation patterns.
2Temperature
If the coolant flow rate is increased to improve cooling, then thermal load is reduced, but temperature distribution becomes non-uniform
Solution Approach 1:
The patent implements dynamics by using a controller to dynamically adjust the coolant flow rate to each cooling channel region in real-time based on thermal load conditions. Rather than using a static uniform flow rate, the system continuously optimizes flow distribution during plasma processing, increasing flow to hotter regions and maintaining or reducing flow in cooler regions. This dynamic adjustment ensures both effective thermal load management and uniform temperature distribution across the substrate chuck.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls substrate temperature, enhancing the uniformity of plasma processing and preventing thermal non-uniformities, thereby improving the precision and consistency of semiconductor manufacturing processes.
Implementation Method 1
a cooler configured to cool the coolant supplied to the cooling channel
Implementation Method 2
a heater configured to heat the coolant supplied to the cooling channel
Implementation Method 3
a cooling channel through which a coolant flows
Data Source
AI summary
A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.