Plasma Processing Tray with Electrostatic Attraction and Heat Conduction Gas

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing plasma processing apparatuses face inefficiencies in substrate cooling, non-uniform plasma processing due to clamp rings, and inadequate positioning accuracy, particularly at the substrate's outer peripheral edge.

Innovation Solution

A plasma processing apparatus with a tray having substrate accommodation holes that expose the substrate's lower surface, supported by a dielectric member with electrostatic attraction and heat conduction gas, eliminating the need for clamp rings and enhancing thermal conductivity and positioning precision.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the substrate is electrostatically attracted indirectly to the substrate susceptor via the tray, then the substrate can be held on the susceptor, but the cooling efficiency is insufficient

Engineering Contradiction:
Improvesubstrate cooling efficiencyVSAvoidcooling mechanism complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The invention extracts the substrate from the tray and places it directly on the substrate susceptor, eliminating the tray as an intermediate component. This direct contact enables efficient thermal conduction for cooling while maintaining electrostatic attraction, resolving the contradiction between cooling efficiency and device complexity.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If a clamp ring is used to pressurize the substrate against the susceptor, then the substrate can be fixed, but plasma processing becomes non-uniform at the outer peripheral edge

Engineering Contradiction:
Improvesubstrate fixation stabilityVSAvoidprocessing uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The invention removes the clamp ring from the system and replaces mechanical pressurization with electrostatic attraction. This eliminates the physical obstruction at the substrate periphery that caused plasma processing non-uniformity, while maintaining reliable substrate fixation through electrostatic forces.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention substitutes the mechanical clamp ring system with an electrostatic attraction system. The electrostatic field provides uniform holding force across the substrate without physical contact or mechanical pressure points, enabling both reliable fixation and uniform plasma processing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Productivity

If the tray structure is used to accommodate the substrate, then batch processing is enabled, but positioning accuracy is insufficient

Engineering Contradiction:
Improvebatch processing capabilityVSAvoidsubstrate positioning accuracy
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The invention introduces a positioning electrode as an intermediary component between the substrate susceptor and the substrate. This positioning electrode provides precise location reference for the substrate, improving positioning accuracy while maintaining the tray structure for batch processing capability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution achieves high cooling efficiency, precise temperature control, and uniform plasma processing across the entire substrate surface, including the outer peripheral edge, while improving positioning accuracy.

Implementation Method 1

an electrostatic attraction electrode embedded therein for electrostatically attracting the substrate to the substrate placement surface

Methodology Applied
Scientific EffectElectrostatic attraction: Electrostatics

Implementation Method 2

the substrate to be cooled with high cooling efficiency, and the substrate temperature to be controlled with high accuracy

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS8591754B2Plasma processing apparatus and plasma processing method
Publication Date: 2013.11.26 PANASONIC HOLDINGS CORP
  • US8591754B2 patent drawing
  • US8591754B2 patent drawing
  • US8591754B2 patent drawing

AI summary

A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.