Electric Discharge Tubes TRIZ Cases

A multibeam electron exposure apparatus adjusts individual beam irradiation positions to maintain precise pattern alignment during lithography.

A tubular sputtering target concentrates plasma discharge along its inward-facing erosion surface to increase deposition rates.

An energy harvesting component generates electrical potential through quantum tunneling effects between conductors separated by a dielectric layer.

Periodic pulsed discharges prevent local electrode heating, enabling higher nanoparticle production rates with consistent particle sizes.

Boron-doped amorphous carbon hardmask deposits via plasma-enhanced chemical vapor deposition to enhance etch selectivity.

Segmented toroidal plasma source with azimuthal apertures delivers spatially uniform plasma products across large semiconductor wafers.

An expandable conductive member reduces heat transmission to connection portions, maintaining uniform temperature and improving processing yield.

Amplitude-modulated RF power lowers substrate floating potential to minimize sticking forces and improve transfer reliability.

Real-time threshold adaptation based on measured output quantities eliminates false detections caused by varying plasma impedance.

A fluorocarbon plasma cleaning method guides ions to non-plasma surfaces via a controlled shutter.

A hinged shell apparatus with a built-in lock prevents loose connections and theft by securely holding welding lead cable connectors.

Variable distribution ratios correct reflected wave deviations in microwave plasma processing, stabilizing power delivery.

A mercury-dispensing material composition stabilizes elemental mercury within intermetallic compounds to enable precise dosing in lighting applications.

Outer edge cutout portions in the porous ceramic gas shower plate absorb thermal expansion strain, preventing cracks from rapid temperature increases.

A density modulated silicon thin film electrode structure accommodates volume expansion during cycling.

Segmented contacts in a single housing deliver power to separate components and the circuit board, resolving space constraints without adding complexity.

Segmented upper and lower units with keyed contacts self-align via asymmetric coupling, reducing installation complexity for single-person mounting.

A sensor substrate with a distance sensor measures focus ring thickness using electrostatic capacitance changes.

A high-speed connector socket uses staggered upper and lower layer pins to reduce volume while maintaining signal integrity.

A particle beam device uses coordinate transformations to guide beams accurately across object surfaces.

Temperature-adjusted film formation reduces trench width deviations, while isotropic etching expands narrow trenches to achieve precise pattern dimensions.

A particle beam imaging device detects emission current changes to maintain consistent image quality.

Segmented matrix electrodes with dedicated wiring separate simultaneous signals to improve position accuracy without added shielding complexity.

Concave and convex surfaces on process kit rings align components to prevent TiW film peeling caused by thermal expansion mismatch.

A cryogenic electrostatic chuck uses a facility plate with coolant channels to maintain substrate temperatures below -50°C.

A sample collection device uses a spacer and weakening structure to hold liquid samples via capillary action.

Segmenting the aperture plate into multiple holes reduces image artifacts and improves focus measurement accuracy by smoothing the frequency spectrum.

Ultraviolet irradiation activates surface reactions at low temperatures, preventing thermal damage to sensitive features while maintaining deposition rates.

Segmentation isolates the sample cartridge from environmental noise, while preliminary action automates exchange to eliminate vacuum cycling delays.

Current map generation detects beam displacement in the blanking aperture array, resolving throughput-reliability trade-offs in semiconductor writing.

Uniform columnar central contact rotates into housing projection, resolving complex assembly bottlenecks.

Pipe-shaped cavities in sealing members suppress heat transfer between temperature zones, preventing seal deterioration and maintaining airtightness.

Individually relocatable electromagnet sections maintain plasma density symmetry, ensuring uniform etching rates on semiconductor substrates.

Segmented bottom electrodes isolate inductive plasma cleaning zones from electrostatic chucks, extending component lifetime and maintaining throughput.

A suspended photoresist layer and back cavity structure enable electron beam spot diameter calculation through exposed pattern length measurement.

An indenter assembly uses thermal insulation and expansion control to maintain measurement precision at elevated temperatures.

Remote plasma etch with fluorine precursors selectively removes tungsten while protecting silicon films.

Linear potentiometers detect column height to automate adjustment, replacing manual methods that waste time and lack precision.

Oblique laser pulses compress electron beams using ponderomotive forces to counteract pulse expansion and velocity chirp.

A controller stabilizes central cathode emission current using peripheral measurements to maintain drawing accuracy.

Ion implantation defines etching boundaries within low-k insulating layers to create controlled air gaps, resolving poor dimension and profile control issues.

A plasma processing tray uses electrostatic attraction and heat conduction gas to secure substrates directly on placement surfaces.

Multiple nanostructure arrays on a single substrate diffract light at specific angles to produce animated images.

A short arc discharge lamp uses a segmented reflection surface with two distinct focal points to direct light output efficiently.

A vacuum processing method maintains chamber pressure above the triple point to prevent moisture solidification during evacuation.

Monolithic integration of sensors and electronics minimizes foreign body response while wireless power extraction prevents local tissue heating.

Cutting-type knurling creates surface irregularities on a tantalum sputtering coil, preventing flaking and arcing during deposition.

Segmented plasma sources reduce power consumption while delivering high cleaning rates to restricted aperture areas.

A focused ion beam deposition method uses defocused and focused beam steps to create thick films with good shape.