Resilient Power Connector for Plasma Processing Heat Management
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Solution Overview
Problem
Existing plasma processing apparatuses face reliability issues due to heat generation and uneven temperature distribution, leading to damage in the electric power supply path and affecting the precision of semiconductor wafer processing.
Innovation Solution
A plasma processing apparatus with a resilient electric power supply connector using a tubular insulating member and a conductive member with resiliency, which expands and contracts to adjust the length of the power supply path, reducing heat transmission and maintaining uniform temperature, and a ring-shaped electrode with a dielectric susceptor ring to manage the electric field concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high frequency electric power is supplied to the conductor ring to improve processing yield, then large electric current flows, but heat generation in the electric power supply path increases and can damage connection portions
Solution Approach 1:
A resilient connector is introduced as an intermediary component between the power supply and conductor ring. This connector includes a resilient member that can expand and contract, and a cooling member that acts as a heat dissipation path, thereby mediating the heat generation problem while maintaining the high current flow needed for processing yield
Solution Approach 2:
The patent replaces the conventional rigid mechanical connection with a resilient connector that uses elastic deformation and thermal conduction principles. The resilient member substitutes rigid mechanical coupling with flexible mechanical-thermal coupling, allowing heat management while maintaining electrical connection
2Power
If large electric current flows through the power supply path to improve processing, then processing effectiveness increases, but the connection portion can be damaged due to high heat generation
Solution Approach 1:
The resilient connector serves as a protective intermediary between the high current path and the connection portions. The cooling member within the connector provides a dedicated heat dissipation path, protecting connection portions from thermal damage while allowing large currents to flow
Solution Approach 2:
The resilient connector is designed with built-in cooling capacity and thermal management features before heat damage can occur. The cooling member is pre-positioned to provide heat dissipation capability, cushioning against potential thermal damage to connection portions
3Manufacturing precision
If the electric field concentration is reduced in the outer peripheral side region to prevent performance deterioration, then processing uniformity improves, but the processing speed may be affected
Solution Approach 1:
The susceptor ring with dielectric material is selectively positioned in the outer peripheral region of the sample stage. This creates local quality differentiation where the dielectric property is applied specifically where needed to reduce electric field concentration at the periphery, while maintaining other regions' properties for overall processing efficiency
Solution Approach 2:
The patent changes the dielectric parameter of the susceptor ring in the outer peripheral region. By introducing dielectric material, the electric field distribution parameter is modified locally, reducing concentration at the periphery while maintaining processing speed through controlled parameter adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the reliability and yield of plasma processing by reducing heat-related damage and maintaining uniform temperature, ensuring precise and efficient semiconductor wafer processing.
Implementation Method 1
the portion extending from an upper end portion of the through hole to a lower space of a bottom surface of the sample stage through a bottom end opening of the through hole on the bottom surface of the sample stage in which the pressure is maintained in an atmospheric pressure and including a cylindrical upper end member a position of which is fixed with respect to the base material inside the tubular insulating member and a lower end member which extends from the inside space of the through hole to the lower space of the sample stage and a resilient conductor which is disposed between the upper end and lower end members and electrically connected with both and is biased in an up-down direction, and is expanded and contracted, the portion being configured to increase and decrease a length between the upper end member and the lower end member through the bottom end opening by the resilient conductor's expansion and contraction
Implementation Method 2
the electric field in the outer peripheral side region of the substrate including a susceptor ring including a dielectric and disposed on the outer peripheral side of the substrate to cover the upper face of the upper portion of the sample stage is adjusted
Data Source
AI summary
The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.