Trench Width Deviation Control via Temperature-Adjusted Film Formation
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Solution Overview
Problem
The challenge in manufacturing electronic devices is the formation of patterns with dimensions smaller than the resolution limit of resist masks, which requires precise control of trench widths to achieve high integration and minimize deviations in critical dimensions.
Innovation Solution
A method involving the measurement and adjustment of trench widths on a workpiece surface, where temperature adjustments and film formation processes are used to reduce deviations, followed by isotropic etching to expand trench widths to desired reference values, utilizing aminosilane-based gases and nitrogen-containing gases in a plasma processing apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography technique is used to form resist mask, then pattern transfer is achieved, but resolution limit prevents formation of patterns smaller than the resolution limit
Solution Approach 1:
The patent adjusts the dimensional shape parameters of the resist mask by controlling film thickness variations through temperature adjustment during film formation. By changing the temperature of the surface for each region, the film thickness is controlled to reduce the width of openings in the resist mask, enabling pattern formation below the conventional resolution limit.
2Manufacturing precision
If resist mask width is reduced to achieve smaller patterns, then high integration is enabled, but trench width deviation increases
Solution Approach 1:
The patent divides the surface into multiple regions and adjusts the temperature for each region independently based on measured trench widths. Regions with wider trenches receive different temperature adjustments than regions with narrower trenches, creating local quality variations that compensate for width deviations and achieve uniform trench widths across the entire surface.
Solution Approach 2:
The patent implements a feedback loop where trench widths are first measured, then temperature adjustments are made based on the measured deviations from reference values, and finally film formation is performed to correct the deviations. This closed-loop control ensures that trench width uniformity is maintained while achieving the desired critical dimensions.
3Manufacturing precision
If anisotropic etching is used for precise trench formation, then vertical profiles are achieved, but trench clogging occurs due to uneven etching rates
Solution Approach 1:
The patent employs alternating cycles of isotropic etching (expanding trench width) and anisotropic etching (refining trench profile). This periodic action allows the trench width to be gradually expanded in a controlled manner while maintaining vertical profiles, preventing clogging by distributing the etching load across multiple alternating steps rather than using a single aggressive anisotropic etch.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces deviations in trench widths and achieves precise, uniform etching, allowing for the formation of patterns with desired dimensions while maintaining in-plane uniformity and avoiding trench clogging.
Implementation Method 1
a plasma processing apparatus, in which the workpiece is accommodated
Implementation Method 2
a film formation processing for forming a film in an inner surface of the trench
Implementation Method 3
an etching processing for expanding the trench width when the deviation is within the reference range
Data Source
AI summary
Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.