Plated Pillar Dies with Die-Level EMI Shield Layers
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Solution Overview
Problem
Plated pillar dies lack effective electromagnetic interference (EMI) shielding at the die level, leading to performance degradation in EMI-sensitive circuit regions, and existing package-level shielding solutions introduce design constraints and increased costs.
Innovation Solution
Integration of die-level EMI shield layers formed from the metallic seed layer used in the electroplating process, where selected portions are left intact to create a wafer-level shield that is separated into die-level shields during wafer singulation, with ground contact pillars electrically coupled to the shield and non-ground contact pillars isolated, providing comprehensive coverage and grounding for EMI protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If package-level electromagnetic shielding is implemented, then EMI protection is improved, but design flexibility is reduced and costs increase
Solution Approach 1:
The patent transitions EMI shielding from the package level (external dimension) to the die level (internal dimension). By forming conductive shield layers directly on the die surface using the existing metallic seed layer, the shielding function is integrated into the die structure itself, eliminating the need for separate package-level shielding components and associated design constraints
Solution Approach 2:
The metallic seed layer used for electroplating the pillars is given a dual function: it serves both as the foundation for pillar formation and as the material source for creating EMI shield layers. This multi-functionality eliminates the need for separate shielding materials and reduces overall device complexity
2Object-affected harmful factors
If package-level electromagnetic shielding is implemented, then EMI protection is improved, but manufacturing costs increase
Solution Approach 1:
The patent recovers and repurposes the metallic seed layer that would otherwise be consumed or removed during the electroplating process. By leaving selected portions of the seed layer intact after pillar formation, the material is transformed into a functional EMI shielding layer, eliminating the need for additional shielding materials and reducing manufacturing costs
Solution Approach 2:
The electroplating process itself serves a dual purpose: it forms the functional pillars while simultaneously creating the EMI shield layers from the remaining seed layer material. This self-service approach integrates two functions into one process, reducing manufacturing steps and costs
3Reliability
If plated pillars are used for interconnection, then thermal and electrical performance is improved, but EMI susceptibility increases
Solution Approach 1:
The patent merges the interconnection function (plated pillars) with the shielding function (conductive layers formed from the same seed layer material). By integrating both functions into a unified structure on the die surface, the plated pillars provide their thermal and electrical benefits while the associated conductive layers simultaneously provide EMI protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces EMI-induced performance detriments in EMI-sensitive regions while maintaining thermal and electrical performance benefits of plated pillar interfaces, with minimal additional costs and process steps, and simplifies electrical routing by providing direct ground connections to seal ring structures.
Implementation Method 1
the electrically-conductive pillars are conventionally fabricated utilizing an electroplating process. During electroplating, an electrical potential is applied to a masked seed layer deposited on a die-containing wafer
Implementation Method 2
a frontside electromagnetic interface (EMI) shield layer formed from the metallic seed layer... effectively reduces EMI-induced performance detriments in EMI-sensitive regions
Data Source
AI summary
Wafer processing techniques, or methods for forming semiconductor rides, are disclosed for fabricating plated pillar dies having die-level electromagnetic interference (EMI) shield layers. In embodiments, the method includes depositing a metallic seed layer over a semiconductor wafer and contacting die pads thereon. An electroplating process is then performed to compile plated pillars on the metallic seed layer and across the semiconductor wafer. Following electroplating, selected regions of the metallic seed layer are removed to produce electrical isolation gaps around a first pillar type, while leaving intact portions of the metallic seed layer to yield a wafer-level EMI shield layer. The semiconductor wafer is separated into singulated plated pillar dies, each including a die-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the EMI shield layer.