PMOS Pass Transistor Circuit for eFuse Leakage Control
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Solution Overview
Problem
Existing electronic fuse circuits in semiconductor memory devices face challenges in device area occupancy and data reading accuracy, particularly due to transistor leakage issues in shared transistor designs.
Innovation Solution
A power circuit with a PMOS pass transistor, buffer circuit, and bulk voltage control circuit is introduced, where the pass transistor is turned on during programming and off during reading, and the bulk voltage control circuit independently manages the bulk voltage to reduce leakage and ensure accurate reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a shared transistor design is adopted in electronic fuse circuits, then device area is reduced, but transistor leakage increases during reading operations
Solution Approach 1:
The patent segments the transistor control into two independent parts: gate voltage control (for switching) and bulk voltage control (for leakage reduction). By adding a separate bulk voltage control circuit that independently manages the bulk electrode, the system can reduce leakage current without affecting the area-saving shared transistor architecture.
Solution Approach 2:
The bulk voltage control circuit acts as an intermediary mechanism between the shared transistor and the reading operation. It introduces a separate control path through the bulk electrode that mediates the leakage issue without requiring additional transistors in the signal path, thus maintaining area efficiency while reducing leakage.
2Area of stationary object
If a shared transistor design is adopted in electronic fuse circuits, then device area is reduced, but reading accuracy deteriorates due to leakage
Solution Approach 1:
The patent separates the control functions into gate voltage (switching) and bulk voltage (leakage control), allowing independent optimization of each function to maintain both area efficiency and reading accuracy.
Solution Approach 2:
The patent changes the electrical parameter (bulk voltage) applied to the transistor's bulk electrode to reduce leakage current. By adjusting this parameter independently from the gate voltage, the system maintains reading accuracy without compromising the area-saving design.
3Loss of energy
If the pass transistor is turned off during reading operation, then leakage is reduced, but control complexity increases
Solution Approach 1:
The bulk voltage control circuit serves as an intermediary that simplifies the overall control structure. Instead of complex gate voltage modulation to reduce leakage, the system uses a separate bulk voltage control path that directly addresses leakage without complicating the main signal control logic.
Solution Approach 2:
The bulk voltage control circuit provides multiple functions: it reduces leakage current during reading operations and can be integrated with existing control logic. This multi-functional approach reduces control complexity compared to designing entirely separate leakage mitigation mechanisms.
Data Source
AI summary
A power circuit is adapted for providing a programming voltage to an electronic fuse circuit, and includes a pass transistor of a P-type metal-oxide-semiconductor transistor, a buffer circuit, and a bulk voltage control circuit. The pass transistor includes a bulk electrode, a gate electrode, a first source/drain electrode receiving a system high voltage, and a second source/drain electrode connected to a bit line. The buffer circuit provides a control voltage to the gate electrode of the pass transistor. The pass transistor is turned on during a programming operation and turned off during a reading operation. The bulk voltage control circuit independently provides a bulk voltage to the bulk electrode. A last-stage buffer of the buffer circuit is also activated by the bulk voltage to control the pass transistor during the reading operation of the electronic fuse circuit. A method for providing power to an electronic fuse circuit is also provided.