POF Interconnect Dielectrics for Heat Dissipation and Low Capacitance
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Solution Overview
Problem
Conventional low-k dielectric materials in semiconductor devices have limitations in thermal conductivity and mechanical strength, which affect heat dissipation efficiency and parasitic capacitance, especially in advanced semiconductor nodes.
Innovation Solution
Employing porous organic framework (POF) dielectrics, specifically covalent organic frameworks (COFs) with covalent bonds and highly ordered ring structures, to replace conventional low-k dielectrics in the interconnection layer, enhancing thermal conductivity and mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional low-k dielectric materials are used, then the device can be manufactured with current processes, but the thermal conductivity is insufficient and mechanical strength is weak
Solution Approach 1:
The patent employs porous organic framework (POF) dielectrics, specifically covalent organic frameworks (COFs), which are composite materials combining organic molecules with porous structures. These COF dielectrics achieve both high thermal conductivity (1-4 W/(m·K)) and high mechanical strength (Young's modulus 55-350 GPa) simultaneously, resolving the contradiction between thermal management and structural integrity in interconnection layers
2Reliability
If conventional low-k dielectric materials are used, then manufacturing is straightforward, but parasitic capacitance is high affecting performance
Solution Approach 1:
The patent utilizes porous organic framework dielectrics with controlled porosity to achieve low dielectric constants (k ≤ 2). The porous structure reduces the density of polar groups and increases free space, thereby reducing parasitic capacitance between interconnect lines while maintaining the dielectric's mechanical and thermal properties through the rigid COF framework
3Productivity
If geometry size is scaled down to increase functional density, then production efficiency increases and costs decrease, but thermal management becomes more challenging
Solution Approach 1:
The patent changes the fundamental thermal parameter of the dielectric material by introducing COFs with inherently high thermal conductivity (1-4 W/(m·K)) compared to conventional low-k materials. This parameter change enables effective heat dissipation in scaled-down geometries where heat removal is more difficult, maintaining production efficiency without thermal management issues
Data Source
AI summary
A semiconductor device includes a substrate and an interconnection layer disposed on the substrate. The interconnection layer includes a plurality of etch-stop layers, a plurality of first dielectric layers, and a plurality of conductive layers. The first dielectric layers are disposed on the plurality of etch-stop layers, wherein the plurality of first dielectric layers comprises porous organic framework (POF) dielectrics having a dielectric constant of 2 or less, and a thermal conductivity of 1 W/(m·K) or more. The conductive layers are embedded in the first dielectric layers.