Crystalline Polyarylamine Organic Thin-Film Transistors

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Solution Overview

Problem

Current semiconductor materials for thin-film transistors are costly due to silicon manufacturing requirements and are sensitive to air and light, limiting their suitability for large-area electronic devices, while existing organic polythiophenes like PQT 12 do not meet the performance needs for all applications.

Innovation Solution

Development of p-type semiconducting polymers, specifically crystalline conjugated polyarylamines with high mobility and solubility in organic solvents, suitable for printable thin-film transistor circuits, offering improved hole mobility and on/off ratios.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If silicon-based TFT circuits are used, then high switching speeds and reliable performance are achieved, but manufacturing costs become prohibitively high and device flexibility is lost

Engineering Contradiction:
Improveswitching speedVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the fundamental material parameter from silicon-based semiconductors to organic semiconductor polymers, enabling fabrication through low-cost solution processing methods such as spin-coating and printing, while achieving sufficient switching performance for display applications

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the complex mechanical vacuum deposition and photolithography systems required for silicon TFTs with simpler liquid-phase deposition methods, eliminating capital-intensive manufacturing equipment while maintaining device functionality

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If conventional semiconductor materials are used, then adequate electrical performance is achieved, but sensitivity to air and light degradation occurs

Engineering Contradiction:
Improveelectrical performanceVSAvoidair and light sensitivity
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent employs composite material strategies by incorporating protective encapsulation layers and selecting organic semiconductor polymers with inherent environmental stability, creating a multi-layer structure that protects the active semiconductor from air and light while maintaining electrical performance

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent describes fabricating and operating OTFTs in controlled inert atmospheres to prevent degradation from air and moisture, while the organic semiconductor materials themselves exhibit greater inherent stability compared to conventional inorganic semiconductors

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

3Reliability

If PQT 12 polymer is used, then mobility of 0.2 cm2/V·sec is achieved, but on/off ratio and performance for advanced applications remain insufficient

Engineering Contradiction:
Improvehole mobilityVSAvoidon/off ratio
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent modifies the chemical structure parameters of the semiconductor polymer by incorporating specific aromatic amine units and side-chain engineering to optimize both charge carrier mobility and threshold voltage control, achieving superior on/off ratios while maintaining high mobility

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces functional groups and molecular structures at specific locations within the polymer chain to enhance local charge transport properties and interface characteristics, resulting in improved overall device performance including higher on/off ratios

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS7425723B2Organic thin-film transistors
Publication Date: 2008.09.16 GENESEE VALLEY INNOVATIONS LLC
  • US7425723B2 patent drawing
  • US7425723B2 patent drawing
  • US7425723B2 patent drawing

AI summary

An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure:wherein R1 through R5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; andwherein the polyarylamine has a mobility (μ0) of 10−4 cm2/V·sec or greater.