Photosensitive Polyimide Dry Film for Sub-3 Micron Patterning

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current photoimageable dielectric (PID) materials for semiconductor packaging struggle with high-resolution patterning of features less than 3 microns and the production of thin dry films, failing to meet the demands of next-generation semiconductor applications.

Innovation Solution

A dry film structure comprising a carrier substrate with a photosensitive polymeric layer, including fully imidized polyimide polymers, reactive functional compounds, and photoinitiators, which can be patterned to achieve features of up to 3 microns in size and a thickness of at most 5 microns, overcoming the limitations of existing PID materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If current PID materials are used for patterning, then existing manufacturing processes can be maintained, but lithographic resolution cannot achieve features less than 3 microns

Engineering Contradiction:
Improvelithographic resolutionVSAvoidmaterial performance consistency
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent modifies the chemical composition parameters of PID materials by incorporating specific photoinitiators (types I and II), reactive functional compounds, and fully imidized polyimide polymers with controlled molecular weights. These parameter changes enable the material to achieve lithographic resolution of 2:1 and support feature sizes of 3 microns or less while maintaining manufacturing reliability through standardized formulation.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite PID material system combining multiple components: polyimide polymers (fully imidized), photoinitiators (types I and II), reactive functional compounds, and optional solvents. This composite formulation synergistically improves lithographic resolution, adhesion, and etch resistance while enabling thin film applications at 5 microns or less thickness.

Inventive Principle:
Principle #40Composite materials

2Length of stationary object

If current PID materials are used for thin film applications, then existing coating methods can be used, but films thinner than 5 microns cannot be produced with sufficient quality

Engineering Contradiction:
Improvefilm thicknessVSAvoidfilm uniformity and quality
Core Design Contradiction:
Length of stationary objectVSManufacturing precision

Solution Approach 1:

The patent adjusts formulation parameters including polymer molecular weight distribution, solvent selection and concentration, and additive ratios to enable processing of ultra-thin films. The controlled composition allows for uniform film deposition at thicknesses of 5 microns or less while maintaining adequate adhesion, resolution, and mechanical properties through optimized material parameters.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If higher resolution patterning is achieved, then next-generation semiconductor requirements are met, but material complexity increases

Engineering Contradiction:
Improvefeature size resolutionVSAvoidmaterial composition complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces spatial and functional differentiation within the material system. Type I and Type II photoinitiators provide complementary photochemical functions, reactive functional compounds are positioned to enhance specific interfaces, and polymer chain lengths are distributed to balance resolution and processability. This local quality optimization achieves high resolution patterning while managing overall material complexity through targeted functional distribution.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed dry film structure enables the production of patterned layers with high resolution and thin thickness, suitable for advanced semiconductor packaging applications, improving lithographic resolution, thermal, and mechanical properties.

Implementation Method 1

the photosensitive polymeric layer includes at least one photoinitiator... the photosensitive polymeric layer is capable of forming a patterned layer when the photosensitive polymeric layer is exposed to actinic radiation

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS11899364B2Photosensitive polyimide compositions
Publication Date: 2024.02.13 FUJIFILM ELECTRONIC MATERIALS U S A INC
  • US11899364B2 patent drawing
  • US11899364B2 patent drawing
  • US11899364B2 patent drawing

AI summary

This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.