Polymer Gap Fill Between Semiconductor Dies to Prevent Cracking
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Solution Overview
Problem
The process of filling gaps between semiconductor dies using oxide materials is costly, time-consuming, and prone to misalignment due to cracking and warpage, which can impair the integrity of the bond between the dies and the package lid, especially during high-temperature processes.
Innovation Solution
Using a polymer material, such as polyimide, to fill the gaps between semiconductor dies, which provides structural integrity and withstands high temperatures without the need for prior thinning, reducing cracking and misalignment issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide materials are used to fill gaps between semiconductor dies, then the bonding integrity can be maintained, but the process becomes costly, time-consuming, and prone to cracking and warpage
Solution Approach 1:
The patent changes the material parameter from oxide to polymer, which fundamentally alters the processing conditions. The polymer material can be applied at lower temperatures and without requiring the complex thinning process needed for oxide materials, thereby maintaining bonding integrity while significantly improving process efficiency and reducing manufacturing costs
Solution Approach 2:
The patent employs a polymer fill material that is cost-effective compared to oxide materials. The polymer provides sufficient functional performance for gap filling and structural support without requiring the expensive deposition and processing steps associated with oxide materials, thus reducing overall manufacturing cost while maintaining adequate reliability
2Reliability
If oxide materials are used to fill gaps between semiconductor dies, then the bonding integrity can be maintained, but the process becomes prone to cracking and warpage
Solution Approach 1:
By changing from oxide to polymer material, the patent eliminates the thinning process requirement, thereby eliminating the source of cracking and warpage. The polymer material maintains its integrity throughout the bonding process, ensuring precise alignment between dies and preventing bonding defects
Solution Approach 2:
The patent applies polymer material to the substrate before die bonding, creating a cushioning layer that accommodates thermal expansion and mechanical stresses during the bonding process. This prevents cracking and warpage from developing, thereby maintaining alignment precision and bonding integrity
3Strength
If polymer material is used to fill gaps between semiconductor dies, then structural integrity and high temperature resistance are achieved, but the material must withstand subsequent high temperature processes
Solution Approach 1:
The patent selects polymer materials with specifically engineered thermal properties, including high glass transition temperatures and appropriate coefficients of thermal expansion. These parameter changes enable the polymer to maintain structural integrity and resist thermal degradation during subsequent high-temperature bonding processes, matching the thermal performance requirements of traditional oxide materials
Data Source
AI summary
Methods and apparatus using polymer material to fill gaps between semiconductor dies are disclosed. An example apparatus comprises a semiconductor substrate, a semiconductor die positioned on the semiconductor substrate, and a polymer material in contact with a side of the semiconductor die, the polymer material extending from a first surface of the semiconductor die towards a second surface of the semiconductor die, the first surface of the semiconductor die facing towards the semiconductor substrate and the second surface of the semiconductor die facing away from the semiconductor substrate.