Polymer Gap Fill and SiN Interface for Hybrid Bonded Stacks
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Solution Overview
Problem
Current manufacturing processes for stacked semiconductor systems face challenges in efficiently filling gaps between semiconductor dies using silicon dioxide, which are time-consuming and can damage the dies, and polymer materials, which are not suitable for hybrid bonding.
Innovation Solution
A polymer material is used to fill gaps between stacked semiconductor dies, followed by deposition of a silicon nitride intermediate layer to support hybrid bonding, with vertical electrical connections to the redistribution layer, enabling faster deposition and hybrid bonding without damaging the dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon dioxide is used to fill gaps between semiconductor dies, then the gap filling is complete and suitable for hybrid bonding, but the manufacturing process is time-consuming and can damage the dies
Solution Approach 1:
The patent applies preliminary action by first depositing a polymer material as a gap-fill layer before the final silicon dioxide deposition. This preliminary polymer layer serves as a protective and preparatory structure that enables subsequent silicon dioxide deposition to proceed faster and with less damage risk, thus resolving the contradiction between complete gap filling and manufacturing time
Solution Approach 2:
The polymer material acts as an intermediary layer between the semiconductor dies and the silicon dioxide. This intermediate polymer layer facilitates the deposition process by providing a suitable surface that reduces damage during silicon dioxide deposition, enabling both complete gap filling and reduced manufacturing time
2Productivity
If polymer material is used to fill gaps between semiconductor dies, then the deposition is faster and less damaging, but the material is not suitable for hybrid bonding
Solution Approach 1:
The patent uses a composite material structure consisting of a polymer material layer combined with a silicon dioxide layer. The polymer provides fast deposition and protective properties, while the silicon dioxide provides hybrid bonding suitability. This composite approach resolves the contradiction between deposition speed and hybrid bonding suitability by combining the advantages of both materials
Solution Approach 2:
The gap-fill structure is segmented into multiple functional layers: a polymer material layer for fast deposition and protection, and a silicon dioxide layer for hybrid bonding. This segmentation allows each layer to perform its specific function optimally, resolving the contradiction between deposition speed and bonding suitability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing time and cost while maintaining the integrity of hybrid bonds, improving connectivity and sustainability by reducing material usage and waste in electronic device production.
Implementation Method 1
A polymer material is used to fill gaps between stacked semiconductor dies
Implementation Method 2
deposition of a silicon nitride intermediate layer to support hybrid bonding
Data Source
AI summary
Methods, systems, and devices for a stacked semiconductor system are described. The stacked semiconductor system may include a semiconductor die on a redistribution layer (RDL) and a polymer material at least partially surrounding the semiconductor die. A silicon nitride material may be above the semiconductor die and on the polymer material. A logic die may be hybrid bonded with a bonding material on the silicon nitride material. And a conductive post may extend at least partially through the silicon nitride material and the polymer material and may couple the logic die with the RDL.