Semiconductor Package Layout With Polymer TMVs for IPD Compatibility
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Solution Overview
Problem
The semiconductor industry faces challenges with through-silicon vias (TSVs) due to induced stress in double-side integrated passive devices (IPDs), incompatibility with deep-trench capacitor processes, and high costs and lower throughput in fabrication.
Innovation Solution
The use of through-molding vias (TMVs) in a polymer-based material for forming connection structures in semiconductor package structures, which are more compatible with various IPDs and allow for stress mitigation and pre-manufacturing testing, improving yield control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon vias (TSVs) are used for forming connection structures, then electrical connection between layers is achieved, but stress is induced in double-side integrated passive devices (IPDs) and manufacturing cost increases
Solution Approach 1:
The patent introduces an intermediary material (molding compound or polymer-based material) to replace direct silicon-based TSV structures. This intermediary approach allows electrical connection to be achieved while avoiding the stress-inducing characteristics of traditional TSVs in silicon substrates, thereby protecting the IPDs from stress damage.
Solution Approach 2:
The patent changes the material parameter from silicon-based TSV to polymer-based or molding compound-based TMVs. This parameter change in material composition fundamentally alters the mechanical and electrical properties, enabling stress mitigation while maintaining electrical connectivity functions.
2Reliability
If through-silicon vias (TSVs) are used for forming connection structures, then electrical connection is achieved, but manufacturing cost increases and throughput decreases
Solution Approach 1:
The patent replaces expensive, complex TSV fabrication processes with more economical TMV approaches using molding compounds or polymers. These alternative materials and processes are less costly and can be manufactured more efficiently, improving throughput while maintaining the essential electrical connection function.
Solution Approach 2:
The patent substitutes the mechanically complex TSV formation process (requiring precise drilling, lining, and filling operations) with a simpler TMV formation process using molding or polymer deposition. This substitution reduces manufacturing complexity and improves production efficiency.
3Reliability
If through-silicon vias (TSVs) are used for forming connection structures, then electrical connection is achieved, but compatibility with deep-trench capacitor processes is lost
Solution Approach 1:
The patent designs the TMV structure to be universally compatible with multiple IPD fabrication processes, including deep-trench capacitor processes. The molding compound or polymer-based approach can accommodate various IPD formation sequences and process conditions, making the system more versatile than TSV-based approaches.
Solution Approach 2:
By changing the material parameter from silicon to molding compound or polymer, the patent enables compatibility with a broader range of fabrication processes. These materials can be processed at different temperatures and conditions, allowing integration with deep-trench capacitor and other IPD formation processes that are incompatible with silicon-based TSVs.
Data Source
AI summary
A semiconductor structure includes a molding compound having a first surface and a second surface opposite to the first surface, a passive device component disposed in the molding compound, a via penetrating the molding compound from the first surface to the second surface, a first connection structure disposed over the first surface of the molding compound and electrically coupled to the passive device component, and a second connection structure disposed over the second surface of the molding compound. The first connection structure and the second connection structure are electrically coupled to each other by the via.