Polymeric Compound Copolymerization for Resist Pattern Defects
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Solution Overview
Problem
Current resist materials with sultone rings and acid decomposable groups face issues with decomposition during production, leading to defects and suboptimal lithography properties, particularly in the miniaturization of resist patterns.
Innovation Solution
A polymeric compound is produced by copolymerizing a monomer with an —SO2— containing cyclic group and an acid decomposable group in the presence of a basic compound, preventing acid generation and thus suppressing decomposition, and used in a resist composition to form patterns with improved adhesion and lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a monomer containing an acid decomposable group and a monomer containing a sultone ring are copolymerized to produce a polymeric compound, then the resist composition can achieve improved adhesion and lithography properties, but the acid decomposable group decomposes during production leading to defects and suboptimal performance
Solution Approach 1:
The patent applies preliminary anti-action by adding a basic compound to the copolymerization system before the acid decomposable group can decompose. The basic compound neutralizes any acid generated during polymerization, preventing decomposition of the acid decomposable group and sultone ring structures, thereby eliminating defects while maintaining improved lithography properties
Solution Approach 2:
The basic compound acts as an intermediary substance that mediates between the acid-generating polymerization process and the acid-sensitive functional groups. It absorbs or neutralizes acid as it is generated, protecting the acid decomposable group and sultone ring from decomposition while allowing the polymerization to proceed
2Measurement precision
If the wavelength of exposure light source is shortened to achieve pattern miniaturization, then higher resolution is obtained, but the resist material requires higher sensitivity and more stringent lithography properties that are difficult to achieve
Solution Approach 1:
The patent changes the chemical parameters of the resist material by incorporating specific functional groups (acid decomposable groups and sultone rings) into the polymeric compound. These parameter changes enable the resist to achieve both high sensitivity for short-wavelength exposure and the required lithography properties for pattern miniaturization
Solution Approach 2:
The patent uses composite materials by creating a copolymer that combines monomers with acid decomposable groups and monomers with sultone rings. This composite structure provides multiple functions: the acid decomposable groups enable sensitivity and polarity conversion, while the sultone rings provide adhesion enhancement, achieving both resolution and reliability requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces defects and enhances lithography properties by preventing decomposition of the acid decomposable group, resulting in better pattern miniaturization and reduced defects in resist films.
Implementation Method 1
copolymerizing a monomer with an —SO2— containing cyclic group and an acid decomposable group in the presence of a basic compound, preventing acid generation and thus suppressing decomposition
Implementation Method 2
A polymeric compound is produced by copolymerizing a monomer with an —SO2— containing cyclic group and an acid decomposable group
Data Source
AI summary
A method of producing a polymeric compound, including: copolymerizing a monomer containing an —SO2— containing cyclic group with a monomer containing an acid decomposable group which exhibits increased polarity by the action of acid, thereby obtaining the polymeric compound, provided that the polymeric compound comprises no structural unit derived from a monomer that generates acid upon exposure, wherein the copolymerizing is conducted in the presence of 0.001 to 1.0 mol % of a basic compound, based on the monomer containing an —SO2— containing cyclic group.