Polysiloxane Resist Underlayer Composition for 10 Nm Pattern Integrity
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Solution Overview
Problem
The challenge in semiconductor production is the occurrence of pattern collapse and shape deterioration in thin resist patterns due to the further thinning of resist films and underlayer films, which affects the lithographic properties required for advanced semiconductor devices.
Innovation Solution
A silicon-containing resist underlayer film-forming composition comprising a polysiloxane with a weight average molecular weight of 1,800 or less and a solvent, where the polysiloxane has a specific molecular weight distribution and may include hydrolysis condensates of hydrolyzable silanes, is used to form a resist underlayer film with improved thickness and pattern integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the resist film and silicon-containing resist underlayer film are thinned to meet miniaturization demands, then the degree of integration and device density improve, but pattern collapse and shape deterioration occur
Solution Approach 1:
The patent applies parameter changes by precisely controlling the molecular weight distribution of polysiloxane (weight average molecular weight of 1,800 or less, with less than 20% of components having molecular weight greater than 2,500). This parameter optimization enables the formation of uniform thin underlayer films (10 nm or less) that maintain structural integrity and prevent pattern collapse while supporting miniaturized resist patterns.
Solution Approach 2:
The patent uses composite materials by formulating a resist underlayer composition comprising polysiloxane with specific molecular weight characteristics combined with a solvent. This composite formulation creates an underlayer film with optimized mechanical properties and adhesion, enabling thin film formation without pattern collapse while maintaining compatibility with advanced lithographic processes.
2Manufacturing precision
If the silicon-containing resist underlayer film is thinned to 10 nm or less, then the lithographic properties improve for miniaturized patterns, but pattern collapse occurs in conventional systems
Solution Approach 1:
The patent applies parameter changes by optimizing the molecular weight distribution of polysiloxane to weight average molecular weight of 1,800 or less, with controlled distribution where less than 20% of components exceed molecular weight of 2,500. This precise parameter control enables the underlayer film to achieve sufficient mechanical strength and adhesion at thicknesses of 10 nm or less, preventing pattern collapse while maintaining excellent lithographic properties for miniaturized patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of good resist patterns without pattern collapse, even at thicknesses of 10 nm or less, effectively addressing the issues of film thinning and miniaturization in semiconductor processing.
Implementation Method 1
the polysiloxane [A] contains at least one selected from the group consisting of a hydrolysis condensate of a hydrolyzable silane
Implementation Method 2
the polysiloxane [A] contains at least one selected from the group consisting of a hydrolysis condensate of a hydrolyzable silane
Data Source
AI summary
A composition forms a silicon-containing underlayer film, the composition being for forming a silicon-containing resist underlayer film that enables formation of a good resist pattern without pattern collapse even when having a thinner thickness compared to conventional products, such as a thickness of 10 nm or less. The composition for forming a silicon-containing underlayer film contains: [A] a polysiloxane having a weight average molecular weight of 1,800 or less as determined by gel permeation chromatography (GPC) analysis in terms of polystyrene, and the amount of a component having a molecular weight of more than 2,500 is less than 20% in an integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene; and [B] a solvent.