Reactive Polysilsesquioxane Release Layer for Semiconductor Wafer Separation
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Solution Overview
Problem
The development of a release layer with high chemical and heat resistance is required for thin semiconductor chips, as existing technologies face challenges in separating a support from a wafer substrate without damaging the structure, and current release layers lack sufficient edge stability and chemical resistance.
Innovation Solution
A laminate is formed using a release layer composed of a polymer of reactive polysilsesquioxane and crosslinkable group-containing siloxane, which is applied and polymerized on a support or substrate, allowing for high chemical and heat resistance and subsequent separation by light irradiation within the range of 9 μm to 11 μm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a release layer with high chemical resistance is used, then the release layer maintains structural integrity during chemical processes, but the edge stability deteriorates causing peeling
Solution Approach 1:
The release layer is constructed as a composite material comprising a silsesquioxane skeleton combined with specific organic functional groups. This composite structure integrates the high chemical resistance of the silsesquoxane core with the edge-stabilizing properties of the organic functional groups, resolving the contradiction between chemical resistance and edge stability.
2Length of moving object
If a release layer is made thinner to accommodate thinner semiconductor chips, then the chip thickness requirement is met, but the strength and damage resistance of the wafer substrate deteriorate
Solution Approach 1:
The invention changes the material parameters of the release layer by introducing a silsesquoxane skeleton with specific organic functional groups. This parameter change enables the release layer to provide sufficient mechanical strength and damage resistance even when the wafer substrate is thinned to 25-50 μm, allowing thin chips to be handled without excessive thinning.
3Device complexity
If a thermosetting modified siloxane polymer layer is used as the release layer, then the release layer can be altered by heating, but the chemical resistance and heat resistance deteriorate
Solution Approach 1:
The invention changes the fundamental chemical parameters of the release layer by using a silsesquioxane skeleton instead of conventional siloxane polymers. This parameter change provides inherent high chemical and heat resistance while maintaining the ability to alter the release layer through heating or light irradiation, thus resolving the contradiction between alteration capability and resistance properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate provides a release layer with high chemical and heat resistance, preventing edge peeling and adhesive flow, enabling effective separation of the support from the substrate without damaging the structure, even in thermal processes.
Implementation Method 1
heating the composition to polymerize the reactive polysilsesquioxane and the crosslinkable group-containing siloxane, thereby forming the release layer
Implementation Method 2
irradiating the release layer with light having a wavelength falling within the range of 9 μm to 11 μm to alter the release layer
Implementation Method 3
light having a wavelength falling within the range of 9 μm to 11 μm
Data Source
AI summary
A laminate is formed by laminating a substrate and a support plate through an adhesive layer and a release layer. The release layer is formed by applying a composition containing a reactive polysilsesquioxane and a crosslinkable group-containing siloxane onto the surface of the support plate or the surface of the substrate and heating the composition to polymerize the reactive polysilsesquioxane and the crosslinkable group-containing siloxane.