PoP Semiconductor Package Temperature-Based Refresh Control
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Solution Overview
Problem
Mobile DRAMs in semiconductor packages face high power consumption due to frequent refresh operations, especially at higher temperatures, which is exacerbated by the need for more frequent data refresh to counteract leakage current.
Innovation Solution
A refresh control method is implemented in a semiconductor package with a PoP structure, where temperature monitoring identifies 'hot' and 'cold' spots, allowing data to be transferred from hot memory banks to cold ones, and extending the refresh operation period on cold banks while inhibiting refresh on hot banks, thereby reducing overall power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If refresh operation frequency is increased to counteract leakage current at higher temperatures, then data retention reliability is improved, but power consumption increases
Solution Approach 1:
The patent applies local quality by dividing the memory chip into multiple sensing areas and independently controlling refresh operations for each area based on its temperature characteristics. Different refresh periods are assigned to different memory banks corresponding to different temperature zones, allowing optimized power management for each local region rather than uniform refresh across the entire chip.
Solution Approach 2:
The patent implements dynamics by making refresh periods adjustable and adaptive based on real-time temperature monitoring. The refresh control circuit dynamically changes refresh periods for different memory banks according to their respective temperature conditions, transitioning from static uniform refresh to dynamic localized refresh strategies that adapt to thermal variations.
2Reliability
If uniform refresh operation is applied to all memory banks, then data retention is maintained across the chip, but power consumption increases due to unnecessary refresh on cooler banks
Solution Approach 1:
The patent implements local quality by assigning different refresh strategies to different memory banks based on their temperature characteristics. Memory banks in cooler sensing areas with lower leakage current are assigned longer refresh periods or skipped entirely, while hotter banks receive more frequent refresh, eliminating unnecessary energy consumption in cooler regions.
Solution Approach 2:
The patent applies parameter changes by varying the refresh period parameter across different memory banks based on temperature measurements. The refresh control circuit adjusts the refresh period parameter dynamically for each memory bank, changing from a single uniform refresh period to multiple differentiated periods optimized for each thermal zone's leakage characteristics.
3Use of energy by moving object
If temperature-based localized refresh control is implemented, then power consumption is reduced, but device complexity increases due to additional sensing and control circuitry
Solution Approach 1:
The patent applies segmentation by dividing the memory chip into multiple sensing areas with corresponding memory banks, allowing independent temperature monitoring and refresh control for each segment. This segmentation enables localized optimization without requiring complete redesign of the entire memory system, balancing complexity reduction through modular approach.
Solution Approach 2:
The patent implements self-service by having the memory system monitor its own temperature conditions and automatically adjust refresh operations accordingly. The temperature sensing circuitry and refresh control work together within the memory device itself to optimize power consumption without requiring external intervention, making the system self-regulating.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes power consumption by optimizing refresh operations based on temperature gradients within the package, reducing the frequency and duration of refresh operations on cold memory banks and eliminating them on hot banks, leading to improved performance and lower power usage.
Implementation Method 1
monitoring a temperature of each of a plurality of sensing areas of the first semiconductor chip
Data Source
AI summary
A refresh control method of a semiconductor package, comprising: providing a semiconductor package including a first semiconductor chip and a second semiconductor chip; monitoring a temperature of each of a plurality of sensing areas of the first semiconductor chip when the first semiconductor chip operates; identifying at least one memory bank of the second semiconductor chip corresponding to an area having a lower temperature among the sensing areas; controlling the second semiconductor chip to transfer data to the identified memory bank from another memory bank of the second semiconductor chip; and controlling a refresh operation of the second semiconductor chip such that a period of a refresh operation on the identified memory bank is greater than that of a period of a refresh operation on the other memory bank.