Channel-Less Porous Low-k Dielectric Layer for RC Delay Reduction
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into smaller areas, challenges arise in the deposition and patterning processes, particularly in forming efficient dielectric layers that reduce resistance-capacitance (RC) delay and improve electrical efficiency.
Innovation Solution
A method involving the deposition of a low-k dielectric layer using a silicon-oxygen-carbon (SiOC:H) material with a porogen, where the porogen is removed through UV curing, resulting in a channel-less porous dielectric layer with reduced diffusivity and increased porosity, enhancing electrical isolation and resistance to wet chemical etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric layers are used in semiconductor devices, then manufacturing process is simpler, but electrical efficiency is reduced due to higher RC delay
Solution Approach 1:
The patent employs a porous low-k dielectric material with controlled pore structures to reduce the dielectric constant and RC delay. The porous structure is achieved through deposition processes that incorporate voids or pores within the dielectric layer, directly improving electrical efficiency while managing the complexity through controlled material selection
Solution Approach 2:
The patent modifies physical parameters of the dielectric layer including porosity, pore size distribution, and material composition to optimize electrical performance. By controlling deposition parameters such as temperature, pressure, and precursor ratios, the patent achieves desired dielectric properties that reduce RC delay while maintaining manufacturability
2Reliability
If dielectric layer porosity is increased to reduce RC delay, then electrical efficiency improves, but resistance to wet chemical etching decreases
Solution Approach 1:
The patent uses composite dielectric materials that combine low-k porous structures with etch-resistant additives or coating layers. This composite approach allows the bulk material to maintain low dielectric constant for RC delay reduction while the composite structure provides enhanced resistance to wet chemical etching processes
Solution Approach 2:
The patent applies preliminary protective measures by incorporating etch-resistant barriers or modifying the dielectric composition before etching processes occur. This prevents the anticipated degradation from increased porosity by pre-establishing resistance to wet chemical etching through material design
3Productivity
If minimum feature size is reduced to increase integration density, then component integration improves, but additional process problems arise in deposition and patterning
Solution Approach 1:
The patent applies local quality control by optimizing dielectric layer properties in specific regions or at interfaces critical for miniaturization. By controlling deposition parameters locally and creating graded structures, the patent maintains manufacturability while achieving the required feature sizes for high integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a dielectric layer with improved electrical efficiency, reduced RC delay, and increased resistance to etching, allowing for more compact and efficient semiconductor device design.
Implementation Method 1
the porogen is removed through UV curing, resulting in a channel-less porous dielectric layer
Implementation Method 2
A method involving the deposition of a low-k dielectric layer using a silicon-oxygen-carbon (SiOC:H) material with a porogen
Data Source
AI summary
A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.