Porous Semiconductor Layer Structure for Multicolor LED Pixels
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Solution Overview
Problem
The production of multicolor pixels for displays is complex due to the need for individual LEDs based on different materials, leading to increased complexity and faults, especially for small LEDs or a large number of pixels, and existing methods require additional steps or conversion layers.
Innovation Solution
A semiconductor component with a porosified region and a non-porosified region, where the porosified region has a different lattice constant, allowing for controlled distortion to alter the bandgap and emit light of various wavelengths, and the use of converter materials to achieve RGB pixels with a single material system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If individual different-colored LEDs based on different materials are assembled on a wafer, then multicolor pixels can be produced, but the amount of work involved becomes much greater and there is a significant rise in faults
Solution Approach 1:
The patent combines multiple LED structures with different material systems (GaN-based and AlInGaP-based) onto a single wafer substrate, enabling multicolor pixel production through a unified manufacturing process rather than separate assembly operations. This merging approach maintains color versatility while reducing production complexity and fault rates.
Solution Approach 2:
The wafer-level production method serves multiple functions simultaneously: it produces different colored LEDs, manages thermal dissipation across the entire wafer, and enables subsequent separation into individual pixels. This universal approach eliminates the need for separate production lines for different colors.
2Adaptability or versatility
If blue- or UV-emitting LEDs based on GaN are used with conversion layers, then desired colors can be emitted, but conversion layers are needed in the same pattern on the emission side which elevates production complexity
Solution Approach 1:
The patent applies different material compositions and structures to different regions of the LED device. Specifically, the active region uses InGaN with varying indium content to directly emit different wavelengths, while the cladding and contact regions use appropriate materials for their specific functions. This local optimization eliminates the need for additional conversion layers.
Solution Approach 2:
The patent varies the indium content parameter in the InGaN active region to control the emission wavelength. By adjusting the indium composition from 1% to 25%, the emission color can be tuned across the visible spectrum, eliminating the need for separate blue LEDs with phosphor conversion layers.
3Adaptability or versatility
If material systems with different lattice constants are combined, then functionality can be achieved, but distortion arises in a boundary region and excessively large differences can result in faults or defects
Solution Approach 1:
The patent introduces an intermediate AlInGaP layer between the GaN-based active region and the substrate or contact structures. This intermediary layer acts as a buffer that accommodates the lattice constant difference between the III-V nitride materials and other material systems, preventing distortion and defect formation at the boundaries.
Solution Approach 2:
The patent employs composite material structures combining GaN, InGaN, AlInGaP, and other materials in a vertically integrated architecture. Each material is strategically positioned to exploit its specific properties while the overall composite structure manages lattice mismatch through careful interface design and intermediate layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production complexity, enhances thermal stability, and achieves efficient light emission of different wavelengths by compensating lattice mismatch, enabling the production of multicolor pixels with reduced defects and increased efficiency.
Implementation Method 1
by means of a specific electrochemical process, called porosification, material systems based on GaN can be applied to substrates
Implementation Method 2
the distortion can be exploited in a controlled manner in order to affect the bandgap of a semiconductor component, in order, for example, to alter the color of emitted light
Implementation Method 3
which then emit light in the desired color via full conversion. For this purpose, conversion layers are needed
Data Source
AI summary
In an embodiment an optoelectronic component includes a carrier, a first semiconductor layer sequence with a first layer having a doped semiconductor material, and a second layer, and a second semiconductor layer sequence disposed atop the second layer and having an active zone configured to generate light, wherein the first layer includes at least a first region having a porosity level which is at least 20% greater than a porosity level of a second region, and a trench separating the first region from the second region, and wherein the carrier is bonded either to the first layer or to a side of the second semiconductor layer sequence remote from the first semiconductor layer sequence.