Positive Resist Composition for ArF Lithography
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Solution Overview
Problem
Current resist materials for advanced lithography techniques, such as those using ArF excimer lasers, face challenges with high line width roughness (LWR) and etching resistance, particularly when fluorine-containing polymeric compounds are used, which generate excessive outgases and have unsatisfactory dry-etching resistance.
Innovation Solution
A positive resist composition incorporating a base component with increased alkali solubility, an acid-generator component, and a fluorine-containing polymeric compound with specific structural units that generate acid upon exposure, enhancing the solubility in alkali developing solutions and improving pattern shape and lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine-containing polymeric compounds are used as base resin for positive resist, then water repellency and transparency are improved, but outgas generation increases and etching resistance deteriorates
Solution Approach 1:
The patent uses a composite material system consisting of fluorine-containing polymeric compound (C) combined with specific base resin (A) containing acid-dissociable groups. This composite approach allows the fluorine compound to provide water repellency and transparency while the base resin controls outgas generation and maintains etching resistance, resolving the contradiction between beneficial properties and harmful side effects.
2Reliability
If fluorine-containing polymeric compounds are used as base resin for positive resist, then water repellency and transparency are improved, but etching resistance deteriorates
Solution Approach 1:
The patent employs a composite resist composition where fluorine-containing polymeric compound (C) provides water repellency and transparency, while base resin (A) with acid-dissociable groups maintains etching resistance. The synergistic combination allows both properties to coexist without compromising either water repellency or etching resistance.
3Ease of manufacture
If conventional resist materials are used for advanced lithography, then manufacturing process is simple, but line width roughness increases and pattern precision deteriorates
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist material by incorporating fluorine-containing polymeric compound (C) with specific structural units and base resin (A) with acid-dissociable groups. This parameter change in the material composition reduces line width roughness and improves pattern precision while maintaining manufacturing feasibility through established resist fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved lithography properties, including reduced line width roughness and enhanced etching resistance, allowing for the formation of precise resist patterns with better shape fidelity and stability.
Implementation Method 1
an acid-generator component (B) which generates acid upon exposure
Implementation Method 2
an acid-labile group such as a methoxymethyl group, tert-butyl group or tert-butoxycarbonyl group is being introduced into a fluorine-containing polymeric compound
Implementation Method 3
a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid
Data Source
AI summary
A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure and a fluorine-containing polymeric compound (C′) which generates acid upon exposure, the base component (A) having a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and the fluorine-containing polymeric compound (C′) having a structural unit (c0) which generates acid upon exposure and a structural unit (c1) represented by formula (c1) (wherein R2 represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton, Q0 represents a single bond or a divalent linking group, and R0 represents an organic group which may have a fluorine atom).