Positive Resist Composition for High-Resolution Lithography

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Solution Overview

Problem

Current resist materials face challenges in achieving high resolution and excellent shape for very fine semiconductor and liquid crystal display element patterns, particularly with the miniaturization demands of advanced lithography techniques using shorter wavelength light sources and electron beams, where the rectangularity of resist patterns is low, affecting the formation of fine features.

Innovation Solution

A positive resist composition is developed, comprising a base material component with structural units derived from hydroxystyrene and specific acid generator components that generate acid upon exposure, enhancing solubility in alkali developing solutions, allowing for precise pattern formation with improved resolution and shape.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional resist materials are used for miniaturization lithography, then pattern resolution can be achieved, but the rectangularity and shape quality of the resist patterns deteriorate

Engineering Contradiction:
Improvepattern resolutionVSAvoidrectangularity of resist pattern
Core Design Contradiction:
Manufacturing precisionVSShape

Solution Approach 1:

The invention changes the chemical parameters of the resist material by incorporating specific base resins with controlled hydroxyl group content (5-50 mol%) and specific acid generators, which modifies the solubility characteristics and etching behavior to achieve both high resolution and excellent rectangularity in miniaturized patterns

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses a composite resist composition combining specific base resins (polyhydroxystyrene derivatives, copolymers of hydroxystyrene and (meth)acrylate esters) with acid generators and solvents, where the synergistic interaction between components achieves superior pattern shape and resolution compared to conventional single-material resists

Inventive Principle:
Principle #40Composite materials

2Reliability

If acid dissociable dissolution inhibiting groups are used in base resins, then solubility control upon exposure is improved, but the rectangularity of developed patterns deteriorates

Engineering Contradiction:
Improvesolubility control upon exposureVSAvoidrectangularity of resist pattern
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The invention optimizes the parameter of hydroxyl group content in the base resin to 5-50 mol%, which provides sufficient acid-catalyzed solubility enhancement for reliable pattern transfer while preventing excessive swelling that would degrade pattern rectangularity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention introduces specific local chemical structures (polyhydroxystyrene units with controlled hydroxyl content) that provide localized solubility enhancement upon exposure, enabling precise control of developed pattern shape and rectangularity in critical dimensions

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist composition enables the formation of high-resolution, fine resist patterns with excellent shape, suitable for advanced lithography applications, particularly in semiconductor and liquid crystal display element production, by increasing the solubility of exposed areas in alkali developing solutions.

Implementation Method 1

an acid generator component (B) that generates an acid upon exposure

Methodology Applied
Scientific EffectPhotoacid generation: Photo-oxidation

Implementation Method 2

a base material component (A) that exhibits increased solubility in an alkali developing solution under the action of acid

Methodology Applied
Scientific EffectAcid-catalyzed solubility enhancement: Hydrolysis

Data Source

PatentUS8232040B2Positive resist composition and method of forming resist pattern
Publication Date: 2012.07.31 TOKYO OHKA KOGYO CO LTD
  • US8232040B2 patent drawing
  • US8232040B2 patent drawing
  • US8232040B2 patent drawing

AI summary

A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below:wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.