Positive Resist Composition for Fine Pattern Shape Retention

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Solution Overview

Problem

Conventional resist compositions fail to maintain the shape integrity of fine patterns with narrow pitches, particularly hole patterns with diameters of 100 nm or smaller, leading to pattern collapse during the formation of resist patterns.

Innovation Solution

A positive resist composition is developed, comprising a base component that becomes soluble in an alkali developing solution upon acid exposure, utilizing specific structural units and an acid generator to enhance the solubility and shape retention of resist patterns, specifically incorporating structural units represented by general formulas (a0-1) and (a0-2), and an acid generator represented by formula (b1), which generates acid upon exposure, allowing for precise pattern formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional resist compositions are used for forming fine patterns with narrow pitches, then the resist material can be applied and processed, but the pattern shape collapses during development, leading to poor shape retention

Engineering Contradiction:
Improvepattern shape retentionVSAvoidpattern collapse resistance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent modifies the chemical composition parameters of the resist material by incorporating specific structural units (a0-1) and (a0-2) with defined molecular structures and ratios. These parameter changes in the base component composition enhance the pattern shape retention while preventing collapse during development of fine patterns with narrow pitches

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite resist material system by combining the base component containing structural units (a0-1) and (a0-2) with an acid generator component. This composite material approach integrates multiple functional components that work synergistically to maintain pattern integrity and prevent collapse during the lithography process

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If the resist composition is designed for high solubility in alkali developing solution, then the exposed portions can be effectively removed, but the unexposed portions may lose shape integrity

Engineering Contradiction:
Improvepattern formation clarityVSAvoidresist film stability
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent applies local quality by designing the resist material to exhibit different properties in exposed versus unexposed regions. The base component with structural units (a0-1) and (a0-2) is formulated to become soluble only upon acid generation from the acid generator in exposed portions, while unexposed portions maintain their structural integrity and resistance to alkali development

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed resist composition enables the formation of resist patterns with excellent shape retention and high circularity, effectively addressing the issue of pattern collapse in conventional compositions, thereby improving the resolution and shape fidelity of miniaturized features.

Implementation Method 1

an acid generator that generates acid upon exposure

Methodology Applied
Scientific EffectPhotochemical reaction: Photopolymerisation

Data Source

PatentUS8211616B2Positive resist composition and method of forming resist pattern
Publication Date: 2012.07.03 TOKYO OHKA KOGYO CO LTD
  • US8211616B2 patent drawing
  • US8211616B2 patent drawing
  • US8211616B2 patent drawing

AI summary

A positive resist composition including a resin component (A) having a structural unit (a0) represented by general formula (a0-1) (R represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; R1 represents a C3 or more branched alkyl group; and each of R2 and R3 independently represents an alkyl group, wherein R2 and R3 may be mutually bonded to form a polycyclic group) and/or general formula (a0-2) (R is the same as defined above; R8 represents a divalent linking group that contains no halogen atom; and R7 represents an acid dissociable, dissolution inhibiting group), and an acid generator (B1) consisting of a compound represented by general formula (b1) (Y1 represents a C1-C4 fluorinated alkylene group which may have a substituent; X represents a C3-C30 aliphatic cyclic group which may have a substituent; and A+ represents an organic cation).