Power FET Island Fuse Layout for Fast Defect Isolation

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Solution Overview

Problem

Existing methods for manufacturing power transistors with large dimensions, such as connecting multiple elementary transistors in parallel, face issues like short-circuits during production, which require time-consuming island testing and insulation, and leakage currents persist even after fuse breakage due to low breakdown voltage between electrodes.

Innovation Solution

A field effect transistor design featuring a substrate with a semiconductor structure, island-based electrodes, connection tracks, and fuse areas that can be broken to isolate defective islands, with a passivation layer covering the broken fuses to prevent leakage, allowing for simultaneous insulation of defective islands during manufacturing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of time

If fuse areas are broken to electrically insulate defective islands, then manufacturing time is reduced, but leakage currents may still circulate in defective drain fingers

Engineering Contradiction:
Improvemanufacturing timeVSAvoidleakage currents
Core Design Contradiction:
Loss of timeVSObject-generated harmful factors

Solution Approach 1:

A polymer material layer is introduced as an intermediary substance between the broken fuse areas and the external environment. This layer fills the spaces created by broken fuses and provides additional electrical insulation, preventing leakage currents while allowing the fast fuse-breaking method to be used.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The polymer material is deposited in advance to cover and insulate the fuse areas before any breakage occurs. This preparatory insulation layer ensures that when fuses are broken to isolate defective islands, the broken areas are already protected against leakage currents.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Power

If multiple elementary transistors are connected in parallel to create large-dimension power transistors, then current handling capability is improved, but the complexity of detecting and isolating defective islands increases

Engineering Contradiction:
Improvecurrent handling capabilityVSAvoiddefective island detection
Core Design Contradiction:
PowerVSDifficulty of detecting and measuring

Solution Approach 1:

The fuse areas are designed to automatically indicate their functional state through their electrical properties. When a fuse area is broken, it creates a detectable change in the electrical characteristics of the corresponding island, allowing defective islands to be automatically identified without complex external testing equipment.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The fuse areas are extracted as separate, distinct elements between the connection tracks and the electrode portions. This separation allows each island to be independently controlled and isolated through its dedicated fuse area, simplifying the detection and isolation process for defective islands.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces manufacturing time by enabling the electrical isolation of defective islands in a single step and minimizes leakage currents by ensuring the fuse areas can withstand maximum operating currents and breakage, enhancing the transistor's operational efficiency.

Implementation Method 1

a passivation layer arranged on the islands, the connection tracks and the fuse areas, the passivation layer occupying each space created by the breakage of said at least one second fuse area

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Implementation Method 2

at least one second fuse area broken so as to electrically insulate an associated portion of the first electrode belonging to a defective island

Methodology Applied
Scientific EffectFuse breakage: Fracture Mechanics

Data Source

PatentUS11824000B2Field effect transistor and associated manufacturing method
Publication Date: 2023.11.21 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • US11824000B2 patent drawing
  • US11824000B2 patent drawing
  • US11824000B2 patent drawing

AI summary

A field effect transistor includes a substrate; a semiconductor structure formed on a main face of the substrate, the semiconductor structure including a channel area; a first electrode and a second electrode between which extends the channel area, the first electrode including a plurality of portions spaced apart from each other, each portion of the first electrode contributing to forming an elementary transistor referred to as island; connection tracks for electrically connecting the portions of the first electrode to one another; and in which each portion of the first electrode is connected to a connection track through a fuse area, each fuse area associated with the portion of the first electrode of an island being capable of being broken in such a way as to electrically insulate said island if it is defective.