Power Gating Headswitch Leakage Reduction via Dynamic Control Voltage

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Solution Overview

Problem

Conventional power gating circuits experience leakage current due to non-ideal switches, particularly P-channel Metal Oxide Semiconductor (PMOS) headswitches, which reduce battery life despite being turned off, necessitating a need for circuits and techniques to reduce leakage.

Innovation Solution

Implementing a system with a voltage generator that adjusts the control voltage to maintain a super-cut off state or zero gate-source voltage in power gating switches, using a comparator and operational amplifier to dynamically adjust the control voltage based on the source voltage level, thereby reducing gate-induced drain leakage (GIDL).

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If a transistor is turned off to power collapse a part of the processing core, then power consumption is reduced, but leakage current still flows through the transistor

Engineering Contradiction:
Improvepower consumptionVSAvoidleakage current
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent changes the voltage parameter of the gate terminal from conventional levels (0V or Vdd) to an elevated voltage level (Vdd + Voverdrive). This parameter change creates a super-cutoff state in the transistor where the gate-source voltage exceeds the threshold voltage by a significant margin, thereby dramatically reducing leakage current while maintaining the power collapse function

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies preliminary anti-action by proactively elevating the gate voltage above the source voltage before leakage current can significantly impact power consumption. The voltage generator continuously maintains this elevated gate voltage level to preemptively counteract the harmful leakage effect that would otherwise occur in conventional off-state transistors

Inventive Principle:
Principle #9Preliminary anti-action

Data Source

PatentEP4211798B1Systems and methods providing leakage reduction for power gated domains
Publication Date: 2025.08.20 QUALCOMM INC
  • EP4211798B1 patent drawingFigure 1
  • EP4211798B1 patent drawingFigure 2
  • EP4211798B1 patent drawingFigure 3

AI summary

A system includes: a first power supply; a second power supply; a headswitch disposed between the first power supply and logic circuitry; an enable driver coupling the second power supply to a control terminal of the headswitch; and a voltage generator operable to adjust a control voltage from the second power supply to the control terminal of the headswitch in response to a first voltage level of the first power supply exceeding a reference voltage level.