Power Module PCB Layout for Low-Inductance DC Connections
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Solution Overview
Problem
Existing power modules in power electronics face challenges in achieving low-inductance connection technology, which affects the switching performance and power losses of semiconductor components.
Innovation Solution
The power module design positions DC voltage connections strategically, with one connection between the AC and DC connection sides and within the circuit board area, using a printed circuit board to convert voltages and incorporating semiconductor components like IGBTs, and arranging components for minimal inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If DC voltage connections are arranged on the DC connection side outside the circuit board, then the connection technology is simplified and ease of operation is improved, but the inductance increases and switching performance deteriorates
Solution Approach 1:
The patent positions one DC voltage connection on the AC connection side of the circuit board, creating a three-dimensional spatial arrangement of DC connections. This dimensional change allows the connection to pass through or near the circuit board area, reducing the loop area and thus the inductance, while still maintaining external accessibility for connection purposes.
Solution Approach 2:
The patent applies different spatial arrangements to different DC voltage connections. Specifically, one DC connection is positioned on the AC connection side while others are on the DC connection side, creating locally optimized connection paths that minimize inductance for critical current paths while maintaining overall system connectivity.
2Ease of manufacture
If DC voltage connections are arranged outside the circuit board, then manufacturing is simplified, but the inductance increases and power losses increase
Solution Approach 1:
By positioning one DC voltage connection on the AC connection side of the circuit board, the patent creates a more compact current loop that passes through the circuit board area. This spatial arrangement reduces the loop area and thus the inductance, leading to reduced I²R losses and improved energy efficiency, while still maintaining external accessibility for connection purposes.
3Device complexity
If all DC voltage connections are arranged on the DC connection side, then the module structure is simplified and device complexity is reduced, but the inductance increases and switching performance deteriorates
Solution Approach 1:
The patent introduces a novel spatial arrangement where one DC voltage connection is positioned on the AC connection side of the circuit board, creating a three-dimensional distribution of DC connections. This dimensional change optimizes the current loop geometry to minimize inductance, thereby improving switching performance without significantly increasing overall module structural complexity.
Data Source
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AI summary
The invention relates, inter alia, to a power module (1) having an AC connection side (2) and a DC connection side (3) opposite from the AC connection side (2), the power module (1) also comprising: - a printed circuit board (4), - at least one alternating voltage terminal (AC) disposed on the AC connection side (2), and - at least three direct voltage terminals (DCP, DCM, DCN) including one or more middle direct voltage terminals (DCM) and two outer direct voltage terminals (DCP, DCN) including a positive direct voltage terminal (DCP) and a negative direct voltage terminal (DCN), wherein one of the middle direct voltage terminals (DCM) and one of the outer direct voltage terminals (DCP, DCN) are disposed on the DC connection side (3) and, in a plan view, outside of the printed circuit board (4). In order, inter alia, to provide an improved power module (1), it is proposed, inter alia, that the remaining of the direct voltage terminals (DCP, DCM, DCN) is disposed between the AC connection side (2) and the DC connection side (3) and, in a top view, in the region of the printed circuit board (4), in particular in the region of a transistor module (20) of the power module (1).