Power Module Surge Voltage Limiting Element
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Solution Overview
Problem
High voltage gate driver circuits are susceptible to electrical overstress failures due to surge voltages induced by stray inductance in printed circuit board patterns and shunt resistors, particularly affecting low-side transistor switches.
Innovation Solution
A power module is designed with an integrated surge voltage limiting element between the low-side power transistor's second load path terminal and the low-side voltage pin, providing a current path for a portion of the load current to mitigate surge voltages, thereby preventing electrical overstress failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a low-side transistor switch is turned on to enable current flow, then the circuit functionality is improved, but surge voltage is induced due to stray inductance causing electrical overstress failures
Solution Approach 1:
A surge voltage limiting element is introduced as an intermediary component between the low-side transistor switch and the low-side voltage source. This element acts as a mediator that limits the surge voltage caused by stray inductance when current flows through the transistor, thereby preventing electrical overstress failures while maintaining circuit functionality.
Solution Approach 2:
The surge voltage limiting element is positioned in advance before the surge voltage can cause damage to the low-side transistor switch and gate driver circuit. By having this protective element already in place, the circuit is cushioned against potential electrical overstress failures before they occur.
2Measurement precision
If stray inductance in PCB pattern and shunt resistor is present during current flow, then current measurement and circuit operation are enabled, but surge voltage is induced causing electrical overstress
Solution Approach 1:
The surge voltage limiting element converts the harmful effect of stray inductance into a beneficial protective function. By intentionally adding this element, the circuit transforms the potential harm of voltage surges into a controlled situation where the surge voltage is limited to safe levels, protecting the low-side transistor switch and gate driver circuit.
3Power
If gate driver circuit operates at high voltage to drive power transistors, then power switching capability is improved, but susceptibility to electrical overstress failures increases
Solution Approach 1:
The surge voltage limiting element is specifically applied to the low-side gate driver circuit where the electrical overstress risk is highest. This localized protection approach targets the specific area vulnerable to surge voltage damage while maintaining the overall high voltage power switching capability of the gate driver circuit.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of a surge voltage limiting element within the power module effectively reduces surge voltages, enhancing the reliability of high voltage gate driver circuits by preventing electrical overstress failures and ensuring stable operation.
Implementation Method 1
a surge voltage may be induced due to stray inductance of a printed circuit board (PCB) pattern and the shunt resistor
Data Source
AI summary
One or more embodiments provide a power module that includes a high-side power transistor; a low-side power transistor coupled to the high-side power transistor, the low-side power transistor including a first load path terminal through which a load current enters the low-side power transistor and a second load path terminal through which the load current exits the low-side power transistor; a gate driver integrated circuit (IC) configured to drive the high-side power transistor and/or the low-side power transistor; a leadframe having a low-side voltage pin configured to be coupled to a low-side voltage source; a surge voltage limiting element coupled between the second load path terminal of the low-side power transistor and the low-side voltage pin; and a module package, where the high-side power transistor, the low-side power transistor, the gate driver IC, the leadframe, and the surge voltage limiting element are encapsulated in the module package.


