Dedicated module terminals eliminate complex bus bars, reducing inductance and improving cooling performance.
Segmented shaft and surface seals on the casing lid improve assembly workability while maintaining waterproof integrity without increasing casing surface area.
Rotational symmetry of order 3 balances electrical and thermal stresses across switching cells, reducing operational imbalance in three-phase inverters.
Staggered IGBT arrangements reduce heat interference, lowering thermal resistance and module footprint.
Segmented inductors between terminals and nodes reduce high frequency noise where conventional chokes fail.
Vertical semiconductor modules use double-sided cooling to manage heat generation while increasing packaging density.
A conductive member covered with an insulator connects a semiconductor switch to a heatsink at a stable potential.
Spring-loaded contacts enable dynamic circuit expansion under load, eliminating redundant converters and reducing energy losses.
Fluid-cooled buses merge power delivery and thermal management to reduce hose count, lower pump energy, and minimize leak risks in multi-cell power supplies.
Segmented air inlets and flow adjusting plates maintain cooling performance regardless of vehicle direction.
A pre-charge unit thermal protection method estimates transformer current from voltage inputs to eliminate dedicated sensors.
Three-dimensional bus bar arrangements reduce stray inductance and space requirements while protecting insulating materials from welding heat.
Modular branch modules in isolated housings enable easy replacement, reducing downtime while managing device complexity.
A power conversion device aligns switching and diode module output terminals to ensure equal wire lengths between symmetric components.
A power conversion device uses a corrosion-resistant portion on the metallic case to maintain water-tightness with the fixed member.
A bus bar interposed between a capacitor element and a heat dissipation member conducts thermal energy directly from the metal layer.
A rectifier device integrates a power MOS transistor with an anode-connected well region to bypass diode conduction.
A power semiconductor device uses a plastically deformable base portion to accommodate assembly tolerances during transfer molding.
A printed circuit board arranges power switching cells in a convex polygon to optimize current sharing across parallel transistors.
Integrating converter and inverter phases via a shared laminated bus bar reduces interphase impedance, lowering ripple current and enabling device downsizing.
Segmented resilient brackets pre-fastened on housings clamp power devices, resolving assembly complexity while enhancing heat dissipation.
Bolt fastened interlock bus bars replace fragile wire connections that fail under vehicle vibration, ensuring reliable high voltage interruption safety.
Internal capacitor placement near switching devices reduces parasitic inductance.
Integrated wall member suppresses foreign object intrusion without additional cover members, reducing device size and fabrication costs.
Electroplated micromagnetic devices maintain deposition uniformity and electrolyte life, supporting power converters operating above one megahertz.
Multi-section housing provides integrated voltage isolation in PCB power cells, eliminating separate insulating materials and reducing assembly complexity.
Wiring patterns conduct heat from the discharge resistor to the cooler, reducing temperature and preventing open failures in power converters.
A power conversion unit aligns semiconductor modules and capacitors in a straight line to reduce device footprint.
A coil component uses a segmented bottom electrode to provide electrical connection while maintaining magnetic coupling.
Flow passage control member blocks bypass gaps to force cooling medium through radiator fins, resolving heat dissipation inefficiency in power converters.
High-thermal-resistance portions on bus bars electrically connect terminal and common sections while isolating insulation members from welding heat.
Pressurized gas insulation in submodule housings increases dielectric strength, reducing required spacing and enabling compact high-voltage converter designs.
An insulated conductive plate positioned below connection lugs reduces effective inductance through opposing magnetic fields.
A DC/DC converter transformer uses separate through sections to distribute coil groups and improve cooling efficiency.
A power module integrates a surge voltage limiting element between the low-side transistor load path and the voltage pin to redirect current.
A multichannel DC-DC converter assigns wiring lengths based on load current to minimize radiation noise.
Guide portions sandwich and support the power source harness inside the capacitor unit housing, suppressing vibration stress at connection points.
A power semiconductor arrangement uses contacting devices with varying terminal tongue geometries to reduce inductive impedance across parallel switching elements.
Multi-peak hydrogen concentration in the field stop layer suppresses energy loss while maintaining breakdown voltage in thinned semiconductor wafers.
A multi-phase buck converter uses a shared flux magnetic core assembly to reduce switching loss and improve efficiency.
Resin cover holds metal member shielding DC terminals, reducing electromagnetic noise interference while maintaining insulation reliability.
A temperature protection circuit uses a voltage-withstanding clamping circuit to isolate signals via an isolation transformer.
Integrated PCB power cell merges DC bus and capacitors to minimize circuit parasitics, reducing semiconductor stress.
A semiconductor module uses sealing resin with a continuously increasing linear expansion coefficient from the chip to the upper surface.
Curved intermediate member connects opposing heat dissipating members in a power semiconductor module housing.
Three-dimensional packaging structure using flexible printed circuit boards and direct copper bonded substrates for power devices.
Tapered concave electrode structure distributes thermal stress to prevent nickel film exfoliation in SiC power devices.
Segmenting IGBT collectors in a three-level inverter AC switch creates independent discharge paths that prevent damage during insulation tests.