Semiconductor Module Terminal Configuration for Inductance Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor devices with a 2-in-1 package structure face challenges in reducing the number of terminals and connection points, leading to complex bus bar structures and increased inductance when stacked on coolers for cooling, which complicates the mounting and affects performance.
Innovation Solution
The semiconductor device is configured with a first semiconductor module as the upper arm and a second semiconductor module as the lower arm, both with parallel-connected semiconductor elements, where each module has a dedicated terminal (positive or negative electrode) reducing the number of terminals and connection points, and eliminating the need for bus bars between them, thereby simplifying the bus bar structure and reducing inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a 2-in-1 package structure with integrally sealed semiconductor elements is used, then the device compactness is improved, but the number of terminals and connection points increases leading to complex bus bar structures
Solution Approach 1:
The semiconductor device is divided into separate first and second semiconductor modules, each handling specific terminals. The first module includes positive electrode terminals and the second module includes negative electrode terminals, segmenting the terminal management function to reduce overall complexity
Solution Approach 2:
Relay terminals are introduced as intermediary connection points between the first and second semiconductor modules. These relay terminals simplify the connection architecture by providing standardized interface points that reduce the number of direct connections required between modules
2Temperature
If multiple terminals and connection points are used for stacked cooling configuration, then the cooling effectiveness is improved, but the inductance increases due to complex bus bar structures
Solution Approach 1:
The complex bus bar structure is extracted and replaced with a simplified terminal configuration. By using dedicated positive and negative electrode terminals with relay terminals for inter-module connections, the harmful inductive effects of traditional bus bar structures are eliminated while maintaining necessary electrical connections
Solution Approach 2:
Instead of using complex bus bar structures to achieve terminal connections, the invention inverts the approach by using simple dedicated terminals with minimal inter-module connections. This inversion simplifies the current path and reduces inductance while still achieving effective cooling through the stacked configuration
3Device complexity
If the number of terminals is reduced, then the bus bar structure is simplified, but the electrical connection reliability may be compromised
Solution Approach 1:
Different parts of the device have specialized terminal configurations optimized for their functions. The first semiconductor module has positive electrode terminals optimized for high potential connections, while the second module has negative electrode terminals optimized for low potential connections, with relay terminals providing specialized inter-module connection points
Data Source
AI summary
A semiconductor device includes a first semiconductor module and a second semiconductor module. The first semiconductor module configures an upper arm, and includes first semiconductor elements connected in parallel to each other, a sealing resin body, and a positive electrode terminal. The second semiconductor module configures a lower arm, and includes second semiconductor elements connected in parallel to each other, a sealing resin body, and a negative electrode terminal. The first and second semiconductor modules are aligned in an alignment direction. At least one of the first and second semiconductor modules has a relay terminal for electrically relaying electrodes on a low potential side of the first semiconductor elements and electrodes on a high potential side of the second semiconductor elements.