Power Module Semiconductor Switch Half-Bridge Low Self-Inductance
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Solution Overview
Problem
Existing power modules for electric motors lack a compact and space-saving design that effectively manages high-side and low-side semiconductor switches, leading to inefficiencies in current handling and increased self-inductance.
Innovation Solution
A semiconductor switch half-bridge configuration with flat contact gap terminals, where the high-side and low-side switches are connected via a circuit carrier with electrically conductive and insulating layers, forming a compact structure with a phase busbar for efficient current distribution and low self-inductance, utilizing field-effect transistors or IGBTs and integrated with a printed circuit board or ceramic substrate for enhanced conductivity and insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional power module designs are used, then the module can handle high currents, but the module occupies excessive space and has high self-inductance
Solution Approach 1:
The patent transitions from traditional planar PCB layouts to a three-dimensional stacked configuration where semiconductor switches are arranged in multiple layers above and below the PCB. This vertical dimensionality change allows compact integration while maintaining low self-inductance through optimized current paths that return through adjacent layers, effectively reducing the loop area without compromising current handling capability
Solution Approach 2:
The patent implements a nested structure where semiconductor switches are embedded between the PCB and external terminals, with multiple switch layers stacked vertically. The circuit carrier is nested within the assembly, and cooling channels are integrated within the structural layers. This nesting allows maximum component density while maintaining accessible external connections and efficient thermal management
2Volume of moving object
If compact design is implemented, then space is saved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the power module into distinct functional layers: a PCB with integrated circuit traces, multiple semiconductor switch layers (high-side and low-side switches), terminal connection layers, and integrated cooling channels. Each layer is independently manufacturable and can be assembled through standardized stacking processes, reducing overall manufacturing complexity despite the compact three-dimensional configuration
Solution Approach 2:
The PCB serves multiple functions simultaneously: it provides the mechanical substrate, contains the control circuitry traces, acts as an insulating layer, and facilitates thermal management through integrated cooling channels. The semiconductor switch modules are designed as universal units that can be stacked in various configurations to create different power module ratings, simplifying the manufacturing of multiple product variants from a single design platform
3Reliability
If self-inductance is reduced, then switching efficiency improves, but the design becomes more difficult
Solution Approach 1:
The patent optimizes the local geometry of current paths by positioning high-side and low-side switch terminals adjacent to each other in the vertical stack, creating localized current loops with minimal area. The PCB traces are routed to create return paths that are as short as possible, and terminal connections are designed to maintain local current continuity. This local optimization of current path geometry achieves low self-inductance without requiring complex global redesign of the entire module
Data Source
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AI summary
The invention relates to a power module for an electric motor. The power module has at least one semiconductor switch half bridge. According to the invention, the semiconductor switch half bridge has a high-side semiconductor switch and a low-side semiconductor switch, the semiconductor switches of the semiconductor switch half bridge having contact gap terminals which are each formed by a flat surface region of the semiconductor switch and which each point in the same direction. The high-side semiconductor switch and the low-side semiconductor switch enclose between them a circuit carrier having at least two electrically conductive layers, a contact gap terminal of the low-side semiconductor switch and a contact gap terminal of the high-side semiconductor switch of the half bridge being electrically connected to each other by means of the circuit carrier.