Precoat Thickness Control for Reliable Semiconductor Substrate Supports

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Solution Overview

Problem

Existing semiconductor processing systems face challenges in material layer deposition due to the influence of precoat materials on reactor reliability and substrate handling, particularly with thick precoat layers causing increased resistance and potential damage during substrate movement.

Innovation Solution

A semiconductor processing system with a controller that manages precoat thickness by comparing an expected precoat thickness to a predetermined value, allowing for controlled deposition of a precoat material layer and providing user outputs for excessive thickness, and includes features like etching the substrate support to remove legacy precoat and prevent lift pin binding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a precoat material layer is deposited onto the substrate support, then emissivity matching and bridging prevention are improved, but resistance to lift pin movement increases and reliability deteriorates

Engineering Contradiction:

Improvesubstrate support operation reliabilityVSAvoidprecoat resistance to lift pin movement

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent controls the thickness parameter of the precoat material layer to be within a specific range (0.1 micrometer to 10 micrometers). By changing this critical parameter, the system achieves sufficient emissivity matching and bridging prevention while maintaining lift pin movement capability, thus resolving the contradiction between improving substrate support performance and preventing excessive resistance.

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If a thick precoat material layer is deposited, then emissivity matching is improved, but force required for substrate movement increases and damage risk increases

Engineering Contradiction:

Improvematerial layer thickness uniformityVSAvoidactuation force for substrate movement

Core Design Contradiction:

Manufacturing precisionVSForce

Solution Approach 1:

The patent establishes an upper thickness limit of 10 micrometers for the precoat material layer. This parameter control ensures that the precoat is thick enough to provide uniform emissivity matching across the substrate support surface, which improves material layer thickness uniformity, while simultaneously keeping the thickness low enough to avoid excessive force requirements and potential damage during substrate movement.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The controller monitors and controls the deposition process to ensure the precoat thickness remains within the specified range. This feedback mechanism prevents over-deposition that would lead to excessive thickness, thereby avoiding the need for excessive actuation force and reducing damage risk while maintaining manufacturing precision.

Inventive Principle:

Principle #23Feedback

3Manufacturing precision

If precoat deposition is performed to improve reactor uniformity, then material layer uniformity is improved, but clearances between moving structures are reduced and reliability is worsened

Engineering Contradiction:

Improvematerial layer uniformityVSAvoidreactor operation reliability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent specifies a controlled thickness range (0.1 to 10 micrometers) for the precoat material layer. This parameter optimization provides sufficient material to improve reactor environment uniformity and subsequent material layer uniformity, while preventing excessive thickness that would reduce clearances between moving structures such as lift pins and substrate support, thereby maintaining reactor operation reliability.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution ensures reliable operation by preventing precoat-induced lift pin binding and substrate support displacement, maintaining system integrity and efficiency in material layer deposition processes.

Implementation Method 1

depositing a precoat material layer onto the substrate support within the reactor

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

providing a flow of a material layer precursor to the reactor, and exposing the substrate to a material layer precursor under conditions selected to cause a material layer to deposit onto the substrate

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 3

etching the substrate support to remove legacy precoat and prevent lift pin binding

Methodology Applied

Scientific EffectEtching:

Data Source

PatentUS20250003062A1Material layer deposition methods, semiconductor processing systems, and computer program products for controlling thickness of precoat material layers in semiconductor processing systems

Publication Date: 2025.01.02 ASM IP HLDG BV

AI summary

A material layer deposition method includes receiving, at a controller operatively connected to a semiconductor processing system, a process recipe including a precoat thickness parameter. An expected precoat thickness using the precoat thickness parameter using the controller and the expected precoat thickness is compared to a predetermined precoat thickness value using the controller. A precoat material layer is deposited onto a substrate support arranged within the semiconductor processing system using the process recipe when the expected precoat thickness is less than the predetermined precoat thickness value and user output is provided to a user display operatively associated with the controller when the expected precoat thickness is greater than the predetermined precoat thickness value. Semiconductor processing systems and computer program products are also provided.