Semiconductor Precursor Ampoule With Tortuous Flow Path Saturation
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Solution Overview
Problem
Existing ampoule designs for semiconductor manufacturing often have short flow paths, inadequate heating, and uneven carrier gas distribution, leading to insufficient saturation of low vapor pressure precursors and potential particle issues.
Innovation Solution
The ampoule features a tortuous flow path with elongate walls and offset ingress openings, providing a longer flow path for carrier gas saturation and even distribution, along with heating capabilities to maintain precursor vaporization and prevent dust migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a short flow path is used in the ampoule, then the device complexity is reduced, but the carrier gas cannot become fully saturated with vaporized precursor
Solution Approach 1:
The patent employs a tortuous (curved) flow path instead of a straight line, forcing the carrier gas to follow a winding route through the ampoule. This curved path increases the effective contact length between carrier gas and precursor without increasing the linear dimensions of the ampoule, thereby achieving full saturation while maintaining compact device complexity.
2Loss of time
If the carrier gas flow path is short, then the residence time is reduced, but adequate saturation of carrier gas with precursor cannot be achieved
Solution Approach 1:
The tortuous flow path extends the residence time by forcing the carrier gas to traverse a longer, winding route within the ampoule. This curved geometry increases the time available for mass transfer and saturation without requiring a larger ampoule volume, thus resolving the contradiction between time loss and saturation achievement.
3Device complexity
If carrier gas flows directly through the ampoule without distribution features, then the device complexity is minimized, but uneven distribution of carrier gas across the precursor surface occurs
Solution Approach 1:
The patent divides the single carrier gas stream into multiple smaller streams using flow distribution features within the ampoule. This segmentation allows the gas to be distributed more evenly across the precursor surface, improving manufacturing precision of deposition uniformity while adding only moderate structural complexity.
4Device complexity
If the ampoule does not provide adequate heating, then the device complexity is reduced, but the precursor cannot be fully vaporized
Solution Approach 1:
The patent modifies the thermal parameters by extending the residence time through the tortuous flow path, allowing more time for heat transfer to occur. This parameter change enables adequate vaporization at lower or more moderate heating levels, reducing the complexity of the heating system while achieving the required temperature conditions for precursor vaporization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design ensures adequate saturation of carrier gases with precursors, consistent delivery, and reduced particle contamination, enhancing the efficiency and reliability of semiconductor manufacturing processes.
Implementation Method 1
to allow the carrier gas to become fully saturated with vaporized or sublimed precursor
Implementation Method 2
to allow the carrier gas to become fully saturated with vaporized or sublimed precursor
Implementation Method 3
carrier gas flows in contact with the precursor
Implementation Method 4
provide adequate heating of the precursor within the entire vessel
Data Source
AI summary
Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.