Press-Contact Semiconductor Electrode Protection With Rounded Metal Plates
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Solution Overview
Problem
Existing press contact type semiconductor devices face issues with damage to the electrode parts due to the peripheral edges of metal plates pressing against the electrode parts via metal sintered layers, which can compromise the reliability and integrity of the device.
Innovation Solution
The semiconductor device design incorporates a configuration where the peripheral edge of the metal plates is chamfered or rounded, and the metal sintered layer is smaller in size relative to the metal plate and electrode part, preventing the metal plate from pressing into the electrode part and causing damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the metal plate directly contacts the electrode part through the metal sintered layer, then the electrical connection is established, but the peripheral edge of the metal plate presses against the electrode part causing damage
Solution Approach 1:
The peripheral edge of the metal plate is formed with a rounded shape instead of a sharp edge. This curvature modification prevents the peripheral edge from concentrating stress and pressing into the electrode part, thereby eliminating the mechanical damage while maintaining electrical connection through the rounded surface contact.
Solution Approach 2:
The metal plate is designed with non-uniform thickness, where the thickness varies from the center to the peripheral edge. This local quality variation ensures that the peripheral edge has reduced thickness and rounded shape, preventing stress concentration and damage to the electrode part, while the central region maintains sufficient thickness for reliable electrical connection.
2Reliability
If the metal sintered layer is made large to ensure adequate contact area, then the electrical connection is improved, but the metal plate peripheral edge presses more strongly on the electrode part
Solution Approach 1:
The metal plate employs non-uniform thickness distribution, with the peripheral edge region having reduced thickness compared to the central region. This local quality variation allows the sintered layer to maintain adequate contact area for electrical connection while the thinned peripheral edge reduces stress concentration and pressure on the electrode part.
Solution Approach 2:
The peripheral edge of the metal plate is rounded, which distributes the contact pressure more evenly across the sintered layer interface. This curvature prevents stress concentration at sharp edges, allowing adequate contact area without excessive pressure that would damage the electrode part.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents damage to the electrode parts, enhancing the reliability and integrity of the semiconductor device by maintaining the structural integrity of the electrode components.
Implementation Method 1
a metal sintered layer 42 which is between the metal plate 35 and the electrode part 40b
Data Source
AI summary
According to one embodiment, a press contact type semiconductor device includes a first electrode, a second electrode, a pair of metal plates arranged between the first electrode and the second electrode, and a semiconductor element positioned between the pair of metal plates. The semiconductor element includes a semiconductor part with an electrode part on the upper surface of the semiconductor part. A metal sintered layer is between one of the metal plates and the electrode part. The surface area of the electrode part is less than the surface area of the metal plate.