Semiconductor Processing Solution With Dissolved Oxygen Corrosion Control
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Solution Overview
Problem
Conventional processing solutions used in semiconductor manufacturing damage metal layers containing Cu atoms during the removal of resist films, embedding materials, and etching residues, leading to substrate corrosion.
Innovation Solution
A processing solution containing an alkali compound, water, and a corrosion inhibitor, with controlled dissolved oxygen levels between 0.2 mg/L and 1.5 mg/L, and specific corrosion inhibitors like N,N-diethylhydroxylamine, 1-thioglycerol, or erythorbic acid, to enhance removability and anticorrosion properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional processing solutions are used to remove resist films and residues, then removability is improved, but substrate corrosion occurs
Solution Approach 1:
The patent applies parameter changes by controlling the dissolved oxygen concentration to a specific range (0.2-1.5 mg/L) and adjusting the pH value (10.0-12.0) to optimize the processing solution's performance. This resolves the contradiction by finding the optimal parameter range that provides both effective removability and substrate protection
Solution Approach 2:
The patent introduces an intermediary substance (corrosion inhibitor) that mediates between the processing solution and the substrate. This intermediary protects the Cu-containing metal layers from corrosion while allowing the processing solution to effectively remove resist films and residues, thus resolving the contradiction between removability and substrate damage
2Productivity
If alkali compound concentration is increased to improve removability, then resist film removal efficiency is improved, but metal layer damage increases
Solution Approach 1:
The patent applies parameter changes by precisely controlling the alkali compound concentration within a specific range and adjusting the dissolved oxygen level. This resolves the contradiction by optimizing the parameter combination to achieve effective resist film removal while minimizing metal layer damage through balanced chemical conditions
3Ease of manufacture
If processing solution composition is simplified for ease of manufacture, then manufacturing cost is reduced, but corrosion protection effectiveness is compromised
Solution Approach 1:
The patent applies universality by using a corrosion inhibitor that performs multiple functions: it protects Cu-containing metal layers from corrosion, maintains solution stability, and works effectively across the required pH range. This single multi-functional additive resolves the contradiction by providing comprehensive corrosion protection without significantly complicating the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes resist films and residues while preventing damage to metal layers and substrates, maintaining the integrity of Cu-containing metal layers and Low-k materials.
Implementation Method 1
the amount of dissolved oxygen one week after the preparation of the processing solution is 0.2 mg/L or more and 1.5 mg/L or less
Data Source
AI summary
There are provided a processing solution containing an alkali compound, water, and a corrosion inhibitor, in which the amount of dissolved oxygen one week after the preparation of the processing solution is 0.2 mg/L or more and 1.5 mg/L or less, and the corrosion inhibitor is at least one selected from the group consisting of N,N-diethylhydroxylamine, 1-thioglycerol, 1-amino-4-methylpiperazine, carbohydrazide, methylethylketoxime, erythorbic acid, and salts thereof, a method for manufacturing the processing solution, and a method for processing a substrate and a method for manufacturing a semiconductor device using the processing solution.