Non-volatile Memory Program Voltage Control

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Solution Overview

Problem

Non-volatile memory devices experience increased program speed with repeated program/erase operations, leading to longer programming times due to the application of constant program start voltages, which is undesirable as it affects overall program time.

Innovation Solution

A non-volatile memory device with a program start voltage controller that adjusts the program start voltage based on a preset program/erase operation count, using a program/erase count storage unit and program start voltage storage unit to supply varying program start voltages, thereby maintaining consistent program times.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If a low program start voltage is applied to prevent program speed increase, then program speed stability is improved, but overall program time increases

Engineering Contradiction:

Improveprogram speed stabilityVSAvoidoverall program time

Core Design Contradiction:

Stability of the object's compositionVSLoss of time

Solution Approach 1:

The patent implements dynamic adjustment of program start voltage based on program/erase operation count. The program voltage controller modifies the program start voltage according to the stored count value, transitioning from a static voltage approach to a dynamic one that adapts to wear conditions, thereby preventing program speed increase without excessively extending program time

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The patent changes the program start voltage parameter based on the program/erase operation count. By storing different voltage levels in the program start voltage storage unit and selecting appropriate voltages according to the count, the system optimizes the balance between program speed stability and program time efficiency

Inventive Principle:

Principle #35Parameter changes

2Device complexity

If a constant program start voltage is used, then device simplicity is maintained, but program time varies with operation count

Engineering Contradiction:

Improvevoltage control simplicityVSAvoidprogram time variation

Core Design Contradiction:

Device complexityVSLoss of time

Solution Approach 1:

The patent segments the program voltage control into multiple levels stored in the program start voltage storage unit. Instead of using a single constant voltage, the system divides voltage control into discrete segments that can be selected based on program/erase operation count, allowing optimized program times across different wear stages

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent implements a feedback mechanism where the program/erase operation count is stored and used to adjust the program start voltage. The program voltage controller continuously monitors the count and adjusts the voltage accordingly, creating a closed-loop control system that maintains consistent program times

Inventive Principle:

Principle #23Feedback

Data Source

PatentUS7796434B2Non-volatile memory device and method of operating the same

Publication Date: 2010.09.14 SK HYNIX INC

AI summary

Program voltages of a non-volatile memory device are controlled variably according to a program/erase operation count. The non-volatile memory device includes a program voltage supply unit for applying a program voltage to a memory cell, a program/erase count storage unit for storing a total program/erase operation count of the non-volatile memory device, a program start voltage storage unit for storing levels of program start voltages to be differently supplied according to the program/erase operation count, and a program voltage controller for controlling the program start voltage according to the program/erase operation count.